AT-32063-BLKG Allicdata Electronics
Allicdata Part #:

AT-32063-BLKG-ND

Manufacturer Part#:

AT-32063-BLKG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: TRANS NPN BIPO 5.5V 32MA SOT-363
More Detail: RF Transistor 2 NPN (Dual) 5.5V 32mA 150mW Surfac...
DataSheet: AT-32063-BLKG datasheetAT-32063-BLKG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: --
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 12.5dB ~ 14.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: AT32063
Description

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AT-32063-BLKG is a type of transistor, a bipolar junction transistor (BJT), specifically an RF transistor. This type of transistor is designed to work in radio frequency (RF) applications and combines the properties of both an N-type and P-type material into an integrated device. It offers both amplification and switching capability, making it an ideal choice for building high-frequency, low-power RF circuits.

The AT-32063-BLKG is a type of three-terminal, three-layer device called a task-matched lateral field effect transistor (TMLEFT). This type of transistor is especially suited to applications that require maximum signal gain, such as RF circuits used for cellular telephones, walkie-talkies, cordless telephones, and satellite communication systems. This type of transistor is also well suited for use in low-noise and ultra high frequency (UHF) applications, such as those found in radar systems, GPS receivers, and satellite television receivers.

The basic working principle of this transistor is that it uses a three-terminal connection to allow current flow between two of the terminals while a third terminal controls the current flow. This process is known as a voltage divider, and it allows current to flow through the transistor in one direction, while also allowing the voltage across the base and collector of the transistor to be varied depending on the amount of current flowing through each terminal. This type of transistor is especially well suited for RF circuits due to its ability to operate at high frequencies and low power levels.

The key advantage of the AT-32063-BLKG is that it can provide highly efficient performance at low power levels, with greater voltage and current control than most standard BJTs. This type of transistor also features a low parasitic capacitance, allowing it to deliver superior performance in high frequency applications with minimal distortion. Since it is a task-matched device, the transistor’s characteristics are designed specifically to meet the requirements of the application, making it highly efficient and reliable.

In addition to its superior performance, this type of transistor is also extremely versatile and can be used in a wide variety of applications, including those that require high speed and ultra low levels of distortion. The AT-32063-BLKG is also a cost-effective choice for RF circuits, making it an attractive option for designers looking to save time and money in their circuit designs.

The specific data is subject to PDF, and the above content is for reference

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