AT-32063-TR1G Allicdata Electronics

AT-32063-TR1G Discrete Semiconductor Products

Allicdata Part #:

516-1567-2-ND

Manufacturer Part#:

AT-32063-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: IC TRANS NPN BIPOLAR SOT363
More Detail: RF Transistor 2 NPN (Dual) 5.5V 32mA 150mW Surfac...
DataSheet: AT-32063-TR1G datasheetAT-32063-TR1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: --
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 12.5dB ~ 14.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: AT32063
Description

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The AT-32063-TR1G is a high-performance transistor that is used primarily in radio frequency (RF) applications. The transistor is a bipolar type (BJT), meaning it uses both holes and electrons as internal carriers. It is a three-terminal device with a collector, base, and emitter. The transistor is used in a variety of applications, including amplifiers, oscillators, switches, and modulators. Its primary advantage is its high frequency performance, making it well-suited for RF applications.

In order to understand how the AT-32063-TR1G works, it is important to understand the principles of a bipolar transistor. A bipolar transistor is a type of semiconductor device that is made up of two types of semiconductor materials, such as silicon and germanium. When an electrical current is applied to the base, it creates a magnetic field that induces a current in the collector. This current, in turn, produced an amplified voltage in the emitter. To put it simply, a bipolar transistor works by amplifying an input current through a control element, or the base.

The AT-32063-TR1G is a high-frequency transistor that is used primarily in RF and microwave applications. Its high-performance characteristics make it ideal for RF power amplifier applications, as well as for oscillators, radar pulses, and modulators. This device is specially designed to maximize power gain and operate efficiently at high frequencies. Its design also includes a low-noise figure and a low noise floor. Additionally, it offers a low on-resistance, making it a low voltage drop device. This makes it an ideal choice for RF designs where the voltage drop must be minimized.

The AT-32063-TR1G is an ideal device for a wide variety of RF applications, especially those that require high-performance, low-power devices. Its high frequency performance makes it a great choice for wireless communication, such as 2.4GHz WiFi, as well as for other RF applications, such as RF amplifiers and RF switches. Additionally, its low noise figure and low noise floor make it a great choice for designs where the noise level must be kept to a minimum.

In conclusion, the AT-32063-TR1G is a high-performance transistor that is used primarily in radio frequency (RF) applications. It is a three-terminal device with a collector, base, and emitter. Its high-performance characteristics make it ideal for a variety of RF applications, such as amplifiers, oscillators, switches, and modulators. Its design includes a low-noise figure and low noise floor, making it an ideal device for designs where the noise level must be kept to a minimum. This high-performance transistor is a great choice for high-frequency applications and is sure to maximize your design’s performance.

The specific data is subject to PDF, and the above content is for reference

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