AT-41435G Allicdata Electronics
Allicdata Part #:

516-1856-ND

Manufacturer Part#:

AT-41435G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: TRANS NPN BIPO 12V 60MA 35-SMD
More Detail: RF Transistor NPN 12V 60mA 8GHz 500mW Surface Moun...
DataSheet: AT-41435G datasheetAT-41435G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 10dB ~ 18.5dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (35 micro-X)
Supplier Device Package: 35 micro-X
Description

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AT-41435G is a transistor technology which is generally classified as a Bipolar Junction Transistor (BJT) and is commonly used for radio frequency (RF) applications. It is a high-speed transistor which utilizes an epoxy-resin-encapsulated package with a three-lead arrangement. It contains a single collector and a single base lead with a grounded emitter lead.

The AT-41435G is a transistor specifically designed for RF signal applications. It is most effective operating at frequencies ranging from 500MHz to 2GHz, providing signal amplification and signal switching. Its general-purpose packages are designed for surface mounting and designed to eliminate the need for heat sinks and additional external components.

The main purpose of the AT-41435G is to allow transistors to operate at frequencies above the 500kHz range, and to do so with high efficiency. This is because the transistors are designed to be able to achieve higher frequencies by utilizing a reduced base width as well as a higher gate capacitance.

Due to their high frequency operation capability, AT-41435G transistors are often used for both signal amplification and signal switching applications. They are often used in power amplifier, low to medium power radio receivers, and television applications. They can also be used in antenna elements, digital signal processing, RF switching applications, wireless LAN, and broadband networking.

The AT-41435G has a working principle known as bipolar junction transistors (BJTs). BJTs are electrically operated devices which are particularly efficient in amplifying small signals. It works by the flow of electrons from the emitter to the collector and then gaining control of the current flow through the base. The base-collector junction provides a barrier to the current flow, allowing the current flow to be controlled by the voltage on the base.

BJTs are also particularly special in that their output is exclusively controlled by the voltage on the base, which is the main advantage of using BJTs for RF Technology. This is why BJTs are the preferred choice for RF applications such as those performed with the AT-41435G transistor.

Furthermore, the AT-41435G works most effectively when combined with other components, such as resistors, capacitors, inductors, and other active/passive components, which can be used to help shape the amplifier output as required.

In conclusion, the AT-41435G is a transistor technology which is classified as a Bipolar Junction Transistor (BJT) and is commonly used for radio frequency (RF) applications. It is specially designed to be able to operate at frequencies greater than 500kHz, providing high-efficieny signal amplification and switching. Its primary applications include power amplifiers, radio receivers, television applications, antenna elements, digital signal processing, RF switching, wireless LAN, and broadband networking.

Moreover, the working principle of the AT-41435G is based on Bipolar Junction Transistors (BJTs). As BJTs are electrically operated devices which allow the current flow to be controlled by the voltage on the base, it is the preferred choice for RF applications. Finally, when combined with other components, it can help shape the amplifier output according to the user’s requirements.

The specific data is subject to PDF, and the above content is for reference

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