AT-41486-BLKG Allicdata Electronics
Allicdata Part #:

516-1857-ND

Manufacturer Part#:

AT-41486-BLKG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: TRANS SIL LOW NOISE BIPOL 45MD
More Detail: RF Transistor NPN 12V 60mA 8GHz 500mW Surface Moun...
DataSheet: AT-41486-BLKG datasheetAT-41486-BLKG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 9dB ~ 18dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic
Base Part Number: AT41486
Description

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AT-41486-BLKG is a NPN silicon RF high frequency transistor, specifically designed for instantaneous RF applications in a wide range of industries. Its features, including low-cost, high-power, wide operating temperature range, and easy to use, make it an ideal choice for many applications.

The structure of AT-41486-BLKG consists of a base, a collector, and an emitter that are physically separated, similar to a PNP transistor. However, unlike a PNP transistor, the base is connected to the collector, and the emitter is connected to the negative pole of the external circuit, and current flows from the collector to the emitter. The voltage between the collector and emitter is the collector-emitter voltage, which is the input power of the device.

The AT-41486-BLKG is commonly used in a broad range of instantaneous radio frequency (RF) applications. It is used in high frequency amplifiers, RF power masks, matching networks, filters, and power supplies. The transistor is also suitable for low-frequency applications such as small digital circuits, and it can be used in a wide range of temperature ranges. It is also ideal for digital and analog circuits, detectors, oscillators, converters, and inverters. Additionally, the device can be used in push-pull circuits and switching circuits.

The AT-41486-BLKG is fabricated using an epitaxial NPN silicon RF transistor that is designed to be used at a frequency of up to 250 MHz. It has a small, compact package size, with a maximum power dissipation of 400 mW and an effective gain of 17 dB minimum. The transistor also offers an hfe, or current gain, of up to 150 and a collector-base breakdown voltage of between 1 V and 25 V.

The working principle of AT-41486-BLKG is based on the NPN transistor structure, in which a current flows from the base to the collector and out to the load via the emitter. When the base current is applied, it creates a larger collector current due to the current gain, allowing the transistor to amplify or switch the signal. The base current also controls the collector voltage, which can be used for control purposes. The transistor is then used to control the output current and voltage, allowing it to be used in many RF applications.

In summary, the AT-41486-BLKG is an ideal solution for a wide range of instantaneous RF applications. Its small size and low-cost make it an attractive choice for many industries. The device has a wide operating temperature range, a maximum power dissipation of 400 mW, and an effective gain of 17 dB minimum. Its working principle is based on the NPN structure, in which the base current controls the output current and voltage. Thanks to these features, the AT-41486-BLKG can be used in many RF applications, including high frequency amplifiers, RF power masks, matching networks, filters, and power supplies.

The specific data is subject to PDF, and the above content is for reference

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