AT-41511-TR1G Allicdata Electronics

AT-41511-TR1G Discrete Semiconductor Products

Allicdata Part #:

516-1568-2-ND

Manufacturer Part#:

AT-41511-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: IC TRANS NPN GP BIPOLAR SOT-143
More Detail: RF Transistor NPN 12V 50mA 225mW Surface Mount SO...
DataSheet: AT-41511-TR1G datasheetAT-41511-TR1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: --
Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Gain: 11dB ~ 15.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143
Base Part Number: AT41511
Description

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AT-41511-TR1G is a medium power NPN silicon bipolar transistor designed for general purpose amplification, switching, and oscillator circuit applications. It is designed for low-noise and wide-bandwidth operations. The AT-41511-TR1G transistor is capable of providing excellent gain and power characteristics in RF amplifiers, switching applications, and general purpose amplifier designs.

The AT-41511-TR1G application field is best suited for broadband applications such as FM radio, TV receivers, medical imaging, and communications systems. It is also suitable for applications such as linear RF amplifiers, switching, power control, and power converter circuits. The small size and extremely low-power consumption make AT-41511-TR1G suitable for use in battery powered systems. The superior gain and solid-state reliability make it suitable for digital applications.

Working Principle of AT-41511-TR1G: The AT-41511-TR1G is a single-stage transistor that works by varying the current flow between two points. It has a low-noise design and wide-bandwidth operation. The device has a PNP and an NPN silicon bipolar transistor connected in a common emitter configuration. When the base of the PNP transistor is forward biased, current flows from the PNP transistor to the NPN transistor’s collector. This transistor then amplifies the input signal and drives the load. The output signal is then taken from the NPN transistor’s collector.

The AT-41511-TR1G is also designed for a wide temperature range, up to 125 degrees Celsius. This makes it suitable for use in many applications that require heat resistance. The device also has high gain and meets the frequency-response requirements of many applications

The AT-41511-TR1G offers a high degree of flexibility and is an excellent choice for applications requiring low-noise and wide-bandwidth operations. It is ideal for FM radio and TV receivers, medical imaging, communications systems, and more. The high gain, low-noise design, wide-bandwidth operation, and maximum voltage rating of 50V make it an ideal solution for RF amplifiers, switching applications, and general-purpose amplifiers.

The specific data is subject to PDF, and the above content is for reference

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