AT-41511-TR2G

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The AT-41511-TR2G is a high-frequency, high gain device designed for applications such as RF power amplifiers, mixed signal circuits, or high-speed signal amplification up to 1.5 GHz. This transistor is produced by Advanced Transistor Technology, Inc., and is a series of 900MHz NPN Transistors. The device is capable of delivering high gain, excellent linearity, low distortion, and high current capacity all within a small package size of 3.2mm x 3.2mm.

Specifications

The AT-41511-TR2G is a high-power, high-frequency, high-gain NPN Bipolar Junction Transistor. It features a maximum gain of 16 dB, a maximum collector current of 350 mA, a maximum collector-emitter voltage of 8V, and maximum total power dissipation of 1W. The minimum and maximum transition frequencies are 4.5GHz and 1.5GHz respectively. The device is rated for a 25C junction temperature and comes in a SOT-323 package.

Applications

This high-frequency, high-power NPN Bipolar Junction Transistor is ideal for a variety of applications, including:

• RF Power Amplifiers
• Mixed Signal Circuits
• High-Speed Signal Amplification
• 802.11ac Applications
• 5GHz Data Links
• GSM or CDMA Transmitters
• RF Power Final Stages
• 3G/4G/LTE Modems

Working Principle

The AT-41511-TR2G is a three-terminal device composed of P-type and N-type silicon semiconductors. It works on the principle of doping; when negative charges (carriers) from a p-type region transfer to an n-type region, a junction is formed. The movement of these ions then creates a current, which is then amplified by the transistor. The base terminal provides the necessary bias to the emitter junction. By controlling the current at the base, a collector current is then generated, allowing the transistor to amplify the signal.

The device is capable of operating at frequencies up to 1.5GHz and has a high gain of 16dB, making it a very useful transistor in a variety of RF applications. Its ability to operate at such high frequencies and its high level of efficiency make it very attractive for use in radio frequency communications systems.

Conclusion

The AT-41511-TR2G is a high-frequency, high-power NPN Bipolar Junction Transistor ideal for a variety of applications, such as RF power amplifiers, mixed signal circuits, and high-speed signal amplification. It is capable of delivering high gain, excellent linearity, low distortion, and high current capacity all within a small size of 3.2mm x 3.2mm. This device is a great choice for use in RF communications systems due to its high frequency capability and its high level of efficiency.

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