AT-41533-TR1

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The AT-41533-TR1 is an NPN silicon epitaxial planar high frequency transistor. It is designed for use as an amplifier in applications up to 500 MHz and is ideal for applications requiring high gain and lower noise. The device can also be used for linear or low distortion switching applications.

The AT-41533-TR1 is housed in the SOT-363 package, which allows the device to have maximum external lead length for optimal performance. It has a maximum collector current of 0.5A and a maximum collector-emitter voltage of 40V. The device has a collector-to-base reverse breakdown voltage of 35V and has a capacitance of 9.6pF.

The AT-41533-TR1 has excellent gain and input and output capacitance, making it ideal for use in high-frequency applications such as receivers, video modems, amplifiers, oscillators, and general purpose RF amplifiers. The high output power and gain, along with the low noise figure, make the AT-41533-TR1 an excellent choice for high-power, high-frequency applications.

The AT-41533-TR1 is a bipolar junction transistor (BJT), which is a type of transistor that uses two semiconductor junctions. BJTs are composed of a Base, a Collector, and an Emitter, with the base being the control element that controls the flow of current between the collector and the emitter. When a positive voltage is applied to the base, current flows from the collector to the emitter, and when the voltage is removed, the current stops flowing. This is known as the "on-off" action of the BJT.

The AT-41533-TR1 is a RF BJT, which is a type of transistor that is specifically designed to operate at radio frequencies. This type of transistor uses a special construction which provides increased gain and broad bandwidth, enabling it to deliver excellent results in high-f

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