AT-42000-GP4

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain:	10.5dB ~ 14dB
Power - Max:	600mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 35mA, 8V
Current - Collector (Ic) (Max):	80mA
Operating Temperature:	200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Chip

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AT-42000-GP4 Application Field and Working Principle
AT-42000-GP4 is a high-performance transistor produced by Advanced Transistor Company (ATC). It is a bipolar junction transistor (BJT) with RF capabilities that is suitable for use in high-power and high-speed processing. AT-42000-GP4 has an excellent temperature stability, high breakdown voltage, and a low frequency of oscillation. AT-42000-GP4 is usually used in consumer electronics, such as audio amplifiers, television sets, cell phones and satellite communication systems. The device can also be used in print boards and radio amplification systems. AT-42000-GP4 has several features that make it an ideal choice for RF applications. Its wide frequency range of up to 100 MHz means that it can be used in both analog and digital systems. It also has a low noise output that makes it suitable for use as an amplifier in low-noise applications. In addition, AT-42000-GP4 has good thermal stability, which makes it suitable for use in high-temperature applications. Its low power consumption makes it ideal for use in low-power devices and systems. AT-42000-GP4 involves the use of two transistors working together to produce an output signal. This signal is produced by the combination of an input signal, the base-emitter voltage and the collector-emitter voltage. The base-emitter voltage is the voltage that is applied between the base and emitter of the transistor. The collector-emitter voltage is the voltage that is created between the collector and the emitter of the transistor. The base-emitter voltage is usually produced by a DC current. The current creates a voltage that creates a reverse bias between the base and the emitter. The reverse bias reduces the effective voltage between the collector and the emitter, allowing the device to operate as a switch or control current. The collector-emitter voltage is typically generated by a DC current or an AC signal. The current or signal creates a voltage between the collector and the emitter that is sufficient to turn the transistor on. The transistor is turned on when the voltage between the collector and the emitter is positive and turned off when the voltage is negative. It is important to note that the base-emitter and the collector-emitter voltages must be adjusted correctly in order to ensure that the transistor is operating properly. If either voltage is too high or too low, the transistor will not be able to deliver the desired output. AT-42000-GP4 is an ideal choice for RF applications due to its wide frequency range, low noise output, good thermal stability and low power consumption. Although it is a bipolar junction transistor, it is also capable of operating as a field-effect transistor (FET). This makes it suitable for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference