AT-42010 Allicdata Electronics
Allicdata Part #:

AT-42010-ND

Manufacturer Part#:

AT-42010

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: TRANS NPN BIPO 12V 80MA 100-SMD
More Detail: RF Transistor NPN 12V 80mA 8GHz 600mW Surface Moun...
DataSheet: AT-42010 datasheetAT-42010 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain: 10dB ~ 13.5dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (100 mil)
Supplier Device Package: --
Description

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The AT-42010 is a bipolar transistor, also known as a BJT, specifically intended for use in high frequency applications. It is characterized by small size, low power consumption, and high gain. With an excellent noise figure and wide frequency response, it is well suited for use in RF amplifiers of all types, from low power VHF receivers to high power transmitters.

The AT-42010 is primarily composed of two base-collector junction transistors, referred to as a "dual-emitter" configuration. The dual transistors are diode connected to form a single unit, providing two transistors in one package. This provides the user with improved gain and current conduction, as well as better frequency response and stability. The transistors are further separated into two distinct sections, called the High frequency side, and the Low frequency side.

The AT-42010 is constructed with a P-type semiconductor material. Two gates are used to separate the two sections of the device. One gate is referred to as the Emitter and the other is referred to as the Collector. The gates are connected so that the Emitter is connected to the Collector, with the Emitter being biased at a higher voltage than the Collector. This creates a forward-bias situation, and therefore, current can flow through the device.

As with other BJTs, the AT-42010 is capable of operating in both linear and switching circuits. In linear applications, the two transistors are effectively used as an amplifier, with the voltage and current gain being defined by the transconductance of the device. In switching circuits, the two transistors are operated like a switch, with either a logical high or low controlling the state of the transistor.

The AT-42010 can be used in a wide range of radio-frequency applications. It is frequently used in receivers and transmitters for amateur radio operation, as well as for professional applications. This includes AM and FM broadcast transmitters, directional antennas, RF amplifiers, and cellular antennas. The device is also capable of operating in the VHF, UHF, and microwave bands.

The AT-42010 is a rugged, reliable, and easy to use device. Its excellent noise figure and wide frequency response make it ideal for use in all types of high-frequency applications. With its small size and low power consumption, it is ideal for applications where space and power are critical considerations. No matter the application, the AT-42010 provides a versatile and cost-effective choice for radio-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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