
Allicdata Part #: | 516-2369-ND |
Manufacturer Part#: |
AT-42070 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | TRANS NPN BIPO 12V 80MA 70-SMD |
More Detail: | RF Transistor NPN 12V 80mA 8GHz 600mW Surface Moun... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 1.9dB ~ 3dB @ 2GHz ~ 4GHz |
Gain: | 10.5dB ~ 14dB |
Power - Max: | 600mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 35mA, 8V |
Current - Collector (Ic) (Max): | 80mA |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD (70 mil) |
Supplier Device Package: | 70 mil Package |
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The AT-42070 is a NPN transistor designed primarily for RF applications. It can be used for amplifying signals at high frequencies, up to 1 GHz with a collector current of up to 250mA. It is also suitable for applications that require high gain and very low noise.
The AT-42070 is a high performance transistor with excellent thermal characteristics. Its features include low noise, high gain, high breakdown voltage, low capacitance and low on-state resistance. It is fabricated using advanced epitaxial construction, using a Darlington structure on the collector-base junction to achieve the low noise operation. The AT-42070 has a maximum operating temperature of up to +150° C.
The AT-42070 is suitable for use in a wide range of RF applications, including amplifiers for television transmitting, high frequency amplifiers for receivers and transmitters in communications systems, tuners for low noise amplifiers, mixers and detectors, oscillators and frequency converters.
The working principle of the AT-42070 is based on conventional bipolar transistor operation. It produces an output signal that has been amplified from the input signal. When a DC voltage is applied to the base of the transistor, it causes a current to flow in the emitter-base junction, which in turn switches on the collector-base junction. This causes a current to flow through the collector-base junction and into the collector, resulting in an output signal that is amplified from the input signal.
The AT-42070 offers excellent performance in high frequency applications. Its advanced epitaxial construction and Darlington structure on the collector-base junction provide low noise operation and high gain. Its high breakdown voltage, low capacitance and low on-state resistance are ideal for RF applications. It is capable of operating at frequencies up to 1 GHz and a collector current of up to 250mA.
The AT-42070 is an ideal choice for a wide range of RF applications, including amplifiers for television transmitters, high frequency amplifiers for receivers and transmitters in communications systems, tuners for low noise amplifiers, mixers and detectors, oscillators and frequency converters. This transistor offers excellent performance and is suitable for a broad range of applications requiring high gain and low noise.
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