
Allicdata Part #: | AT-42086-TR2G-ND |
Manufacturer Part#: |
AT-42086-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | TRANS NPN BIPO 12V 80MA 86-SMD |
More Detail: | RF Transistor NPN 12V 80mA 8GHz 500mW Surface Moun... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz |
Gain: | 9dB ~ 13dB |
Power - Max: | 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 35mA, 8V |
Current - Collector (Ic) (Max): | 80mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-86 |
Supplier Device Package: | 86 Plastic |
Base Part Number: | AT42086 |
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AT-42086-TR2G transistor is a silicon NPN RF transistor. In RF/microwave engineering, AT-42086-TR2G has evolved from basic radio technology to broadband communications applications. The transistors are used to amplify radio waves in the radio frequency range since they are capable of performing many of the same functions as linear signal amplifiers.
The AT-42086-TR2G is a high-frequency, high-current device, designed for wide-band signal amplification in most RF and microwave applications. The AT-42086-TR2G offers excellent gain, power, and wide frequency response. This new device is designed with a low noise figure and high intercept point, enabling it to provide an excellent gain and medium power capability. The AT-42086-TR2G is also suitable for applications in digital TV, pagers, cordless phones, and satellite communication systems.
Since the AT-42086-TR2G is a RF transistor, its operation is somewhat different from the common low-frequency transistors. The normal bipolar junction transistor has a base region that acts as a voltage-controlled electrode, but in the case of the AT-42086-TR2G, the base region behaves as an impedance-controlled electrode. In other words, the gain of the transistor is determined not by the base voltage, but by the impedance of its input signal. This means that the gain of the AT-42086-TR2G can be tuned for specific applications by varying the impedance at its input.
The AT-42086-TR2G is designed with a high-frequency current gain based on a wide range of frequency inputs. This transistor can be used in a wide range of applications, including small signal amplifiers, oscillators, high-frequency switches, modulators, high-frequency UHF and VHF receivers, linear amplifiers, amplifiers with active feedback, modulators, and frequency converters. Applications requiring performance and wide-band operation are especially well served by the AT-42086-TR2G.
The vast majority of the AT-42086-TR2G\'s electrical characteristics are based on the transistor’s gain. Its gain is determined by the impedance of its input signal, and hence the AT-42086-TR2G has a wide range of gain from low to very high. This makes the AT-42086-TR2G very suitable for most RF and microwave applications where wide-band signal amplification is required.
The AT-42086-TR2G is extremely reliable and can be used in a wide range of temperature and voltage ranges. This makes it ideal for use in high-reliability applications. Furthermore, the AT-42086-TR2G has excellent thermal and electrical stability, making it suitable for high-temperature, high-current applications. Additionally, these devices are designed to be highly immune to radiation, and do not suffer from device degradation caused by exposure to radiation, making them ideal for applications in space and other harsh environments.
In conclusion, the AT-42086-TR2G is a silicon NPN RF transistor that is suitable for a wide range of applications. Its impressive features make it ideal for RF and microwave applications where wide-band signal amplification is required. The transistor offers excellent gain, power, and wide frequency response and is highly reliable and stable. The low noise figure and high intercept point make it an ideal choice for many high-reliability and high-temperature, high-current applications.
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