AT-64000-GP4 Allicdata Electronics
Allicdata Part #:

AT-64000-GP4-ND

Manufacturer Part#:

AT-64000-GP4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: TRANSISTOR NPN BIPOLAR CHIP
More Detail: RF Transistor NPN 20V 200mA 3W Surface Mount
DataSheet: AT-64000-GP4 datasheetAT-64000-GP4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: --
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: --
Description

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The AT-64000-GP4 application field and working principle is a type of transistor device that is used in applications such as field-effect transistors, amplifiers, oscillators, and detector circuits. It is designed for RF applications, and is one of the most commonly used transistors for these purposes. The AT-64000-GP4 is a bipolar junction transistor (BJT) with a high-frequency (RF) response, and is used where the operation of the circuit requires high-frequency operation.

In order to understand the AT-64000-GP4 application field and working principle, it is first necessary to understand the basic structure of a bipolar junction transistor (BJT). A BJT consists of three layers: an emitter, a base, and a collector. The emitter is the layer that transmits the current, while the base and the collector are the layers that control the current, and act as the gates for the current flow. The base is the layer that is used to control the amount of current that passes through the transistor, and is typically the layer that is used for modulation and control. The collector is the layer that collects the current, and is typically used for amplification and power.

The AT-64000-GP4 application field and working principle is based on two basic principles: current gain, and voltage gain. The current gain is the amount of current that can be produced by the transistor. This is referred to as the "gain" or "transconductance" of the device. The voltage gain is the amount of voltage that can be applied to the transistor in order to produce a desired current. The AT-64000-GP4 application field and working principle utilizes these two factors to create a wide range of applications and functions.

In the AT-64000-GP4 application field and working principle, the transistors are designed to operate in either a common-emitter or common-base configuration. In a common-base configuration, the current passes through the base of the transistor in order to control the current flow through the device. This configuration is typically used for amplifiers and oscillators, as the current gain of the device can be adjusted easily. In a common-emitter configuration, the current passes from the emitter of the transistor in order to control the voltage gain of the device. This configuration is typically used for detectors and power amplifiers, as the voltage gain of the device can be adjusted easily.

The AT-64000-GP4 application field and working principle also utilizes an external bias resistor in order to control the operating point of the transistor. This allows the current flow of the transistor to be adjusted, as the bias resistor will adjust the resistance in order to maintain the desired voltage and current. The bias resistor also helps to reduce noise and improve the operation of the device.

The AT-64000-GP4 application field and working principle is a type of transistor that is very efficient in terms of its power consumption and performance. It is used in many RF applications due to its ability to operate at high frequencies and provide high current gains. Additionally, the AT-64000-GP4 is an excellent choice for applications that require high voltage and/or current gain. As such, the AT-64000-GP4 application field and working principle is a popular choice for many types of RF transistors.

The specific data is subject to PDF, and the above content is for reference

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