AT49LV002T-90TC Allicdata Electronics
Allicdata Part #:

AT49LV002T-90TC-ND

Manufacturer Part#:

AT49LV002T-90TC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 2M PARALLEL 32TSOP
More Detail: FLASH Memory IC 2Mb (256K x 8) Parallel 90ns 32-T...
DataSheet: AT49LV002T-90TC datasheetAT49LV002T-90TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: AT49LV002
Description

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The AT49LV002T-90TC is a member of memory devices that provide non-volatile, electrically erasable programmable read-only memory (EEPROM). It is usually used for code storage for digital systems and embedded applications. To offer the highest performance and flexibility, it is designed using advanced architecture, 0.18um triple-well technology, and a dedicated charge pump. Additional features include an extremely low power consumption, fast programming and erasing times, and an extra large endurance life.

Application Field of AT49LV002T-90TC

AT49LV002T-90TC is used in a variety of embedded systems and applications. It is especially applicable in automatic test equipment, data flow automation, factory automation, transportation systems, communication systems, security systems, industrial process control, and medical equipment. In these systems, it supports the hardware configuration and system settings, as well as data archiving and basic data storage.

Working Principle of AT49LV002T-90TC

AT49LV002T-90TC is a non-volatile EEPROM device with a maximum capacity of 2Mbits (256KB). The device is organized as a single block or as eight sectors. Each sector contains up to 256-KB of data and contains an extra 32-byte security area. The security area provides the ability to write codes to the device and protect them from being rewritten later.

The device can use either the 3V2V, the 3V3V, or the 3V6V power sources. It supports program and erase operations on the entire device or on selected sectors. Programming occurs when data is written to the memory array of the device. To erase data, the device applies an electrical discharge to the target cell, which erases the previously written data. Data can also be read from memory array. The device supports concurrent read/program/erase operations and has an extra sector erase sequence, which takes less than 20ms to complete.

This memory device offers fast access times and program/erase speeds. The operating temperature range is between -40 to +85 °C. In addition, it offers on-chip conductors for enhanced noise-immunity, ESD protection, and self-test sequencing. The AT49LV002T-90TC is designed to be used in a wide range of embedded systems and can be used with a variety of software, such as NVRAM software, debugger software, and configuration-file software.

The specific data is subject to PDF, and the above content is for reference

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