AZ23B6V2-G3-08

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Configuration:	1 Pair Common Anode
Voltage - Zener (Nom) (Vz):	6.2V
Tolerance:	±2%
Power - Max:	300mW
Impedance (Max) (Zzt):	10 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 2V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23

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The AZ23B6V2-G3-08 is an array of zener diodes, also known as a dual array. It is a type of diode array that is made up of two or more individual diodes connected in parallel or series, depending upon the current requirement. It is used in a wide variety of applications such as transistors, power supplies, voltage regulators and protection circuits.The AZ23B6V2-G3-08 is specifically designed for applications that require a high voltage ability of up to 6.5V Vz, and a maximum dissipation of 4.2W. It is available in a variety of packages, including TO-5/5, TO-3/3P, TO-50 and TO-220. It has a high zener impedance of more than 500 ohms. The AZ23B6V2-G3-08 also offers excellent reverse-recovery characteristics, allowing it to be used in power supplies and other applications.The AZ23B6V2-G3-08 is primarily used in applications that require voltage regulation and protection of sensitive components from high voltages. It is also used in voltage clamping, voltage dividing, and over-voltage protection applications. The diodes can be used in combination with resistors and capacitors to create voltage protection and regulation strategies.The AZ23B6V2-G3-08 can also be used in applications that require a high-power transistor to drive an output. This is due to the high-voltage and power dissipation capabilities of the AZ23B6V2-G3-08. Additionally, the AZ23B6V2-G3-08 is able to provide a wide input voltage range and a wide output voltage range.The AZ23B6V2-G3-08 works on the principle of zener breakdown. In this process, when a reverse bias is applied to a semiconductor diode, the diode will break down, allowing current to flow in both directions through the diode. This breakdown or avalanche effect is known as the Zener effect. With the AZ23B6V2-G3-08, the breakdown voltage is set and controlled by the value of the N-site resistor.The AZ23B6V2-G3-08 is also used in RF and microwave networks as a blocking diode for frequency doubling, and for harmonics. These applications require that the AZ23B6V2-G3-08 be designed to meet stringent specifications, such as maximum power dissipation and breakdown voltage. The AZ23B6V2-G3-08 is a reliable and robust diode array that can be used in a variety of applications.In conclusion, the AZ23B6V2-G3-08 is an array of zener diodes and is commonly used in a variety of applications. It is designed to provide voltage regulation, over-voltage protection, and blocking of high-frequency signals. The AZ23B6V2-G3-08 has a high-voltage capability of up to 6.5V Vz and a maximum dissipation of 4.2W. It works on the principle of zener breakdown and is available in a variety of packages, such as TO-5/5, TO-3/3P, TO-50 and TO-220.