AZ23B6V2-HE3-08

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Configuration:	1 Pair Common Anode
Voltage - Zener (Nom) (Vz):	6.2V
Tolerance:	±2%
Power - Max:	300mW
Impedance (Max) (Zzt):	10 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 2V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

Array diodes and zener diodes are important components of modern technology. They are used in a variety of applications to maintain the validity of the electrical system. These components function as a protection or regulating element in varying electrical devices. The AZ23B6V2-HE3-08 is a multi-array zener diode and is one of the more popular components on the market today.

Types

The AZ23B6V2-HE3-08 is a 3W case, 6V voltage regulator with 8 significant figures. This diode consists of two layers of N-type semiconductor material and two layers of P-type semiconductor material which form the array. The top layer is isolated from the other three layers by a sheet of glass.

Characteristics

The AZ23B6V2-HE3-08 has a variety of characteristics which make it suitable for a wide range of applications. It has excellent thermal stability with very low thermal resistance, can operate at a wide range of temperatures, and has a high breakdown voltage. It also has a good high-frequency response, broad dynamic range, high reverse withstand voltage, and good power dissipation capability.

Application Field and Working Principle

The AZ23B6V2-HE3-08 is most often used in the protection and regulation of electrical systems. It serves as a protection device or regulator by providing an even flow of power and reducing noise or spikes in the electrical system. This diode provides a path for electricity to flow from the input to the output and prevents spikes in current or voltage levels. It is ideal for telecommunication systems, as it offers excellent signal control, surge protection, and low noise performance. The working principle of the AZ23B6V2-HE3-08 is based on the PN junction effect of the two N-type and two P-type layers. When the power is applied to the diode, the P-type and N-type layers form a barrier, preventing current or voltage levels to exceed the breakdown voltage of the diode. The breakdown voltage is determined by the semiconductor material used and is typically between 5 and 6 volts for the AZ23B6V2-HE3-08. As the voltage exceeds this level, current starts to flow from the input to the output, creating an even flow of electricity.

Conclusion

The AZ23B6V2-HE3-08 is a popular array zener diode with a variety of characteristics and applications. It is used in a variety of electrical systems, providing protection and regulation of power levels and reducing noise. The diode operates on a PN junction effect, preventing voltage levels from exceeding the diode’s breakdown voltage and creating an even flow of electricity from the input to the output.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description