AZ23C6V8-HE3-08

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The AZ23C6V8-HE3-08 diode array is part of the Zener diode family. They are small two-terminal semiconductor devices, often constructed of silicon, that exhibit a unique electrical characteristic called Zener breakdown. The AZ23C6V8-HE3-08 specifically provides overcurrent and overvoltage protection, as well as the ability to restrain transients that may occur. Additionally, these diodes help prevent damage to sensitive components, making them an indispensable part of an application’s circuitry.

Zener diode arrays are composed of several individual Zener diodes strapped together in series, which allow them to function as a single Zener diode. They provide the same protection and transient restraint as their standard counterparts, but with a much higher power rating. The AZ23C6V8-HE3-08 is a highly efficient 8-diode array that provides maximum power dissipation of 3.4 watts, making it a widely used protective solution for a variety of applications.

The AZ23C6V8-HE3-08 is a special type of Zener diode array known as a Multi Anode Array (MAA). The MAA consists of a group of eight identical Zener diodes that are connected in series but share a single common anode. This reduces the total amount of space needed for the installation of the array, which makes it ideal for high-density applications that require a high number of Zener diodes.

The AZ23C6V8-HE3-08’s main application is to protect against over-voltage and over-current conditions. The diodes within the array ensure that protection is maintained regardless of the direction of the current (AC or DC). Additionally, thanks to their clamping mechanisms in response to transients, the AZ23C6V8-HE3-08 is excellent for providing protection against voltage surges. The array has a VZ (maximum continuously reverse voltage) of 6.8 volts, making it suitable for use in a variety of applications.

The AZ23C6V8-HE3-08 works through the principle of Zener breakdown. This refers to the electrical process in which current passes from the anode to the cathode in a reverse biased diode. The electric field strength within the diode increases as the reverse voltage increases and eventually reaches a point at which there is an electric breakdown. This breakdown redirects the incoming current so that some of it passes through the junction and the rest continues to flow through the diode. The amount of current that passes through the diode is limited, however, by the Zener diode’s reverse breakdown voltage.

Unlike standard Zener diodes, the AZ23C6V8-HE3-08 array also includes a gold termination finish to reduce contact resistance and corrosion. This provides improved electrical performance and reliability, making it a popular choice for applications where these properties are required. Additionally, the array’s design has been optimized for low-temperature operation and has a surge high-temperature rating of 150˚C.

The AZ23C6V8-HE3-08 is a highly versatile, efficient Zener diode array and with its features makes it an ideal choice for high-density applications. It provides up to 3.4 watts of power dissipation, can be used for over-voltage and over-current protection, and can also help to protect against transients. Thanks to its gold termination finish, it is also highly reliable, making it well suited for use in a range of applications.

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