AZ23C6V8-TP

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The AZ23C6V8-TP diode array is designed to serve as a voltage protection device in a variety of settings, from simple on/off applications to more complex power conditioning and distributed power configurations. It is constructed from high-quality silicon-doped polycrystalline silicon, is capable of handling high currents, and has a low forward voltage drop to reduce power loss. The AZ23C6V8-TP is commonly used in applications that require reverse bias or Zener breakdown voltage protection, such as in parallel circuit protection, cell phone charger overvoltage control, laptop charger overvoltage protection, and power switch overvoltage protection.

The AZ23C6V8-TP is available in three different packages and configurations, including a dual array package with two diodes connected in parallel, and a single diode array package. Its dual array package allows for one important application: the ability to independently control both the reverse and overvoltage current levels of each diode.

The AZ23C6V8-TP’s performance is based on its ability to maintain a stable breakdown voltage even at high currents, which helps ensure decreased power losses and a stronger safety guard against overvoltage damage. Its superior manufacturability also makes it suitable for applications where reliable, consistent performance is essential.

The operation of the AZ23C6V8-TP array is based on the Zener breakdown principle, which states that the voltage at which a diode begins to conduct will remain constant, regardless of the current passing through the diode. This helps keep the reverse bias current low and protects the device against overvoltage situations. In the AZ23C6V8-TP, this principle is realized through the integration of two Zener diodes in each package.

The two Zener diodes that make up the AZ23C6V8-TP are each designed to have a different breakdown voltage rating, resulting in a total breakdown voltage range of 7V to 25V (for the dual array package). This ensures that the device can be configured to meet the exact voltage protection requirements of each application. Additionally, the AZ23C6V8-TP also features a low dynamic resistance, ensuring that the voltage at which the device begins to conduct is maintained even as the current increases.

Aside from its use as a voltage protection device, the AZ23C6V8-TP can also be used as a voltage reference in dual and single diode configurations. It is best used when the desired output voltage is lower than the breakdown voltage of the diode components. In this configuration, the device can reduce the output voltage and serve as a voltage reference to drive other components of the circuit or power supply.

The AZ23C6V8-TP array is a versatile and reliable tool for various voltage protection and voltage reference applications. Its high-quality silicon-based construction and its ability to maintain a stable breakdown voltage even at high currents makes it a great choice for a variety of applications. Furthermore, its low forward voltage drop, superior manufacturability, and ability to independently control both the reverse and overvoltage current levels of the diodes make it the perfect fit for use in any power condition or distributed power system.

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