Allicdata Part #: | BCR133FB6327-ND |
Manufacturer Part#: |
BCR 133F B6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW TSFP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR 133F B6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | BCR133 |
Supplier Device Package: | PG-TSFP-3 |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 130MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Transistors - Bipolar (BJT) - Single, Pre-Biased describes the range of discrete transistors that are manufactured with a base-collector junction maintaining a predetermined reverse bias. These transistors are also referred to as ‘prebiased’ transistors. The BCR 133F B6327 is a common example of a pre biased transistor.
The BCR133F B6327 has been successfully used in a variety of applications requiring discrete transistors. These applications include power amplifiers, telecom, analog switches and amplifiers, logic and memory devices, motor control, and motor driver circuits. The most prominent application of the BCR133F B6327 is in the telecommunications industry, where its high voltage capabilities, low noise characteristics and high gain-bandwidth make it an ideal choice for wireless applications.
The basic operating principle of the BCR133F B6327 is fairly simple. The transistor consists of an emitter, a base, and a collector. When an electrical current is applied to the emitter, it attracts electrons from the base and accelerates them into the collector. This generates a current that is proportional to the current applied to the emitter. The pre-biased junction of the BCR 133F B6327 creates the bias of the device, allowing the transistor to operate over its specified range of voltages.
The BCR133F B6327 has a high power rating, with the ability to handle currents up to 8 A and voltages up to 20 V. It also has a high gain-bandwidth, which is a measure of the current gain in high-frequency applications. The BCR133F B6327 has a low on voltage, which reduces the amount of power dissipation in the transistor when used in digital circuits. Additionally, the pre-biased configuration of the BCR133F B6327 helps increase the current gain of the device.
The BCR133F B6327 also offers excellent thermal stability, with the ability to operate over a wide range of temperatures. This makes the device well-suited for use in applications requiring long life and reliable operation. The low on-resistance of the BCR133F B6327 also allows it to be used in high-performance applications that require more current. Additionally, its lightweight construction and small package size make it ideal for use in space-constrained applications.
In summary, the BCR133F B6327 is a reliable, efficient, and cost-effective choice for a wide range of discrete transistor applications. Its pre-biased configuration ensures reliable, stable performance over a wide range of voltages, while its high gain-bandwidth and low on-voltage make it well-suited for high-frequency and digital applications. Furthermore, its excellent thermal stability and lightweight construction make it an ideal choice for long life and space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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