Allicdata Part #: | BCR108WH6327XTSA1TR-ND |
Manufacturer Part#: |
BCR108WH6327XTSA1 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW SOT323-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR108WH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
36000 +: | $ 0.01693 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR108 |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 170MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BCR108WH6327XTSA1 is a single, pre-biased bipolar junction transistor (BJT) designed to provide superior performance in a variety of applications. This transistor features a high gain and low power dissipation, making it suitable for use in high-speed digital circuits and low-noise analog circuits.
The BCR108WH6327XTSA1 utilizes a bipolar NPN transistor construction that is ideal for applications where a high current gain is desired. This device offers a low voltage drop and low device capacitance, making it suitable for high-gain analog circuitry. Additionally, the BCR108WH6327XTSA1 is capable of providing high speed switching with minimal switching losses.
In terms of operation, the BCR108WH6327XTSA1 is designed to provide its high gain with a relatively low voltage and current. The base of the transistor is pre-biased, meaning that the transistor is already in an ON-state at the time of manufacturing. This pre-biased transistor allows the user to make faster analog design changes, reducing overall development time. Moreover, the device’s pre-biased construction reduces the number of components required on the device.
As far as pin-out is concerned, the BCR108WH6327XTSA1 contains three pins: the collector (C), the base (B), and the emitter (E). This configuration allows for a symmetric input and output, allowing for easy signal flow between the device’s input and output nodes. Additionally, the device’s symmetric construction helps minimize the risk of current leakage or signal-loss during operation.
The BCR108WH6327XTSA1 is suitable for a variety of applications, including high-speed switching, amplifier-driver applications, and low-power audio circuits. Additionally, the BCR108WH6327XTSA1 can be used in high-speed logic circuits, as it is capable of providing high-speed performance with minimal switching losses. This device is also suitable for low-noise analog circuitry, as its low capacitance and low-voltage drop provide superior performance in these types of applications.
In conclusion, the BCR108WH6327XTSA1 is an ideal single, pre-biased bipolar junction transistor for applications where high performance and low switching loss is required. Its pre-biased construction enables faster design changes, while its symmetric pin-out ensures consistent signal flow. Furthermore, its low capacitance and low voltage drop help reduce noise and power dissipation, allowing for improved performance in low-power analog circuits. The BCR108WH6327XTSA1 is suitable for a variety of applications, including high-speed switching, amplifier-driver applications, low-power audio circuits, and low-noise analog circuitry.
The specific data is subject to PDF, and the above content is for reference
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