BCR116WE6327BTSA1

DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 5mA, 5V
Base Part Number:	BCR116
Supplier Device Package:	PG-SOT323-3
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Transistors - Bipolar (BJT) - Single, Pre-BiasedA BCR116WE6327BTSA1 transistor is a single-device, pre-biased, bipolar junction transistor (BJT). It is designed to provide a relatively low-cost solution for small-signal switching applications. In addition, it is suitable for use in high-speed data processing systems, as well as other applications that require high switching speeds and high reliability.The BCR116WE6327BTSA1 is a PNP type transistor, which is commonly used as a power switch in low-power applications. Its low-noise operation make it an excellent choice for digital circuits that require a fast response time. The small size and ease of installation make it a popular choice for many applications.The transistor consists of three layers. The emitter layer is the outer layer, and is made up of a metal, usually copper or aluminum. The base layer is the inner layer, and is made up of a semiconductor material, such as silicon. The collector layer is the middle layer, and is also made up of a semiconductor material.The working principle of the BCR116WE6327BTSA1 is based on the operation of a transistor in its active region. When a small current flows through the emitter, it causes the voltage at the base to increase. This in turn causes the current to flow from the collector to the emitter, increasing the total current flow through the transistor. This current flow is proportional to the applied voltage, resulting in current gain.When a large current is required, the base-emitter voltage is increased to the point where the collector-emitter voltage has dropped enough that current will not flow through the transistor. This is known as saturation mode, or as a saturation region.In this working mode, the BCR116WE6327BTSA1 transistor can be used as a power switch to supply power and control the current to connected circuits. The transistor can also be used as a digital logic gate and to control the duty cycle of an output when used as an amplifier. The transistor can also be used to regulate voltage in regulated power supplies.Due to its low noise performance and high speed switching, the BCR116WE6327BTSA1 transistor is a popular choice for many different applications. It is typically used in LED and LCD displays, data processing systems, automotive systems, industrial machinery, and many other electronic applications.The BCR116WE6327BTSA1 is a reliable and economical transistor, which makes it ideal for a variety of applications. Its low noise operation and high speed switching make it a great choice for many different systems.

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