BCR119WH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BCR119WH6327XTSA1TR-ND

Manufacturer Part#:

BCR119WH6327XTSA1

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS NPN 250MW SOT323-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR119WH6327XTSA1 datasheetBCR119WH6327XTSA1 Datasheet/PDF
Quantity: 1000
36000 +: $ 0.01693
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Base Part Number: BCR119
Description

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A BCR119WH6327XTSA1 is a transistor that belongs to the single pre-biased bipolar junction transistor (BJT) category. It is a hybrid circuit of an NPN transistor, also known as a bipolar transistor, and a PNP transistor, also known as a pre-biased transistor. The terms bipolar and pre-biased mainly refer to the type of electronic field-effect that the transistor is able to generate when it is in operation.

BCR119WH6327XTSA1 are usually used in applications where alternating current (AC) power must be converted to direct current (DC) power. An example of this would be in the form of a power supply, where AC power from a power grid is converted into DC power for powering a variety of appliances and equipment. A BCR119WH6327XTSA1 is usually paired with other components such as diodes, resistors, capacitors, and transistors of different types.

The BCR119WH6327XTSA1 also has the ability to operate its own amplifier circuit. An amplifier is an electronic circuit that uses a transistor to boost a weak signal and output a stronger one. It is often used in applications such as audio amplification, radio receivers and transmitters, and telecommunications.

The BCR119WH6327XTSA1 works mainly by conducting electrons across its base and emitter junction when voltage is applied. As the voltage increases, more electrons flow and the current increases until it reaches saturation. This type of operation is referred to as bipolar junction operation because the transistor acts as a switch between conducting and non-conducting states.

In a pre-biased operation, two transistors are connected with the base-emitter junction of one connected to the collector-emitter junction of the other. When voltage is applied, the voltage at the collector-emitter junction of the first transistor is higher than the voltage at the base-emitter junction of the second transistor. This difference is referred to as bias current, and it helps the transistor operate as an amplifier.

BCR119WH6327XTSA1 transistors are designed for use in high-frequency switching applications, where fast switching speeds and high current handling capability is needed. The transistor’s package size is also relatively small, making it a great choice for space-constrained applications.

In the end, the BCR119WH6327XTSA1 is a reliable and efficient transistor that can be used in a variety of applications. It is an excellent choice for applications where high-frequency switching and amplification is needed, and its compact size and excellent current handling capability make it a great choice for space-constrained applications.

The specific data is subject to PDF, and the above content is for reference

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