Allicdata Part #: | BCR133E6393HTSA1-ND |
Manufacturer Part#: |
BCR133E6393HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN SOT23 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR133E6393HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 130MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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BCR133E6393HTSA1 is a type of transistor that falls in the category of transistors - bipolar (BJT) - single, pre-biased. It is typically used in low-noise high-gain amplifiers, voltage regulators, switch circuits, and other similar applications.
BCR133E6393HTSA1 is a five-lead device with three terminals in the form of Cathode, Collector, and Emitter. The other two leads marked as Front Base and Rear Base dictate the biasing of the device during operation. Some of the features of this transistor include low noise, high gain, and low collector-emitter saturation voltage. The device can also operate at high temperatures, up to 175*C.
The bipolar transistor has two types of operation - the active region and the cutoff region. In the active region, current flows between the Collector and the Emitter, and the Collector-Emitter Voltage (VCE) is constant. In the cutoff region, there is no current flow between the Collector and the Emitter and the Collector-Emitter Voltage is zero. The voltage at the Front Base determines the region of operation. If the voltage is greater than 0.7V, then the device is in the active region, and if the voltage is less than 0.7V, then the device is in the cutoff region.
The BCR133E6393HTSA1 is a pre-biased device, meaning that it is already set to a certain bias voltage so it can be used immediately in a circuit without having to make adjustments. This also saves circuit designs to avoid sending additional power supplies to the device. Generally, the Front Base of the device is internally set to 3.2V, while the Collector is internally set to 0V. However, the bias voltage can also be adjusted externally through the Front Base and the Collector pins.
The BCR133E6393HTSA1 is used in the same types of applications as regular bipolar transistors, such as low-noise high-gain amplifiers, voltage regulators, switch circuits, and more. It is often used in applications that require a pre-biased device as it provides an easy and straightforward way to use the transistor. Additionally, it can also be used in applications that require operation at high temperatures as it can withstand up to 175°C.
In conclusion, the BCR133E6393HTSA1 is a type of pre-biased bipolar transistor used in applications such as low-noise high-gain amplifiers, voltage regulators, switch circuits, and more. It has three terminal pins in the form of Cathode, Collector, and Emitter and two lead pins marked as Front Base and Rear Base. The voltage at the Front Base determines the region of operation of the device. The BCR133E6393HTSA1 is a pre-biased device that can be used without further adjustment, and it can also operate at high temperatures up to 175°C.
The specific data is subject to PDF, and the above content is for reference
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