Allicdata Part #: | BCR142B6327HTLA1TR-NDTR-ND |
Manufacturer Part#: |
BCR142B6327HTLA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR142B6327HTLA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR142 |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BCR142B6327HTLA1 is a single, pre-biased bipolar transistor that has a wide range of applications in power- and signal-switching circuits. This device is a PNP type transistor that features short switch-off time and low on-resistance. Furthermore, it is also capable of handling high-current loads and provides excellent performance in amplifier circuits due to its reasonable noise figure and low capacitance.
The BCR142B6327HTLA1 falls under the Transistors - Bipolar (BJT) - Single, Pre-Biased category. This device is specifically designed with a pre-biased configuration, which eliminates the need for biasing or voltage-building components in the circuit. It also allows for a faster turn-off time, allowing signals to switch between high and low levels more quickly.
The BCR142B6327HTLA1 is also an excellent choice for applications that require protection from electrical overstress due to its low voltage drop and its excellent thermal dissipation characteristics. The low voltage drop ensures that the device is not damaged due to high-voltage electrical spikes that may occur in certain conditions, while the thermal dissipation helps to ensure the device does not overheat and is able to operate for long periods of time without any problems.
The BCR142B6327HTLA1 has several distinct advantages over other types of transistors. Firstly, it has a very low on-resistance, which makes it ideal for power transistors. This means that more current can be passed through the transistor before saturation occurs, allowing for higher load capability. Secondly, the device has a short switch-off time, allowing for efficient switching between high and low states in signal switches or amplifiers.
The working principle of the BCR142B6327HTLA1 is quite simple. The device consists of two electrodes, the collector and the emitter. When a voltage is applied to the collector, it creates a current flow in the device, which moves through the device in the form of electrons. The electrons then flow into the emitter, out of the device, which causes the current to decrease until it reaches zero. This creates a switch-off effect, allowing the device to switch states quickly.
The BCR142B6327HTLA1 is a great choice for a variety of applications, including power- and signal-switching circuits, amplifier circuits, and protection from electrical overstress. Its low voltage drop and excellent thermal dissipation characteristics ensure the device will operate for long periods of time without the need for additional protection from electrical spikes. The low on-resistance and short switch-off time of the BCR142B6327HTLA1 also make it an ideal choice for powering high-current loads and for efficient signal switches.
The specific data is subject to PDF, and the above content is for reference
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