Allicdata Part #: | BCR142WE6327HTSA1TR-NDTR-ND |
Manufacturer Part#: |
BCR142WE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW SOT323-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR142WE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR142 |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BCR142WE6327HTSA1 is a single pre-biased bipolar junction transistor (BJT). It is a four-terminal device composed of an emitter, collector, base, and integrated external bias resistor. This device features a low-noise amplifier and high-gain linearity in a single pre-biasing package. Its low noise, high-linearity, and low power consumption make it ideal for a variety of applications.
In terms of its application field, the BCR142WE6327HTSA1 is typically used in the production of amplifiers, high-frequency filters, receivers, and high-order analog-to-digital converters. This type of transmitter is also used in wireless projects such as wireless sensors, short-range wireless chargers, distributed antenna systems, and other applications requiring low-noise amplifiers. Furthermore, it is also suitable for use in super-regenerative and super-heterodyne receivers and transmitters.
The working principle of a BCR142WE6327HTSA1 is based on the principles of a BJT. The base is connected to an external bias resistor and acts as the gate of the transistor. When a current passes through the base, it will “turn on” the transistor and allow current to flow between the emitter and collector. By adjusting the resistance of the external bias resistor, the gain of the transistor can be adjusted. This type of BJT is ideal for amplifying small signals in high-frequency applications.
In summary, BCR142WE6327HTSA1 is a single pre-biased BJT designed for use in low-noise amplifiers. It is used in a variety of applications such as amplifiers, high-frequency filters, receivers, and analog-to-digital converters. Its working principle is based on the principle of a BJT, where the gain is adjustable by adjusting the resistance of the external bias resistor. This type of transistor is known for its low-noise performance and is ideal for amplifying small signals in high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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