Allicdata Part #: | BCR158WE6327HTSA1TR-NDTR-ND |
Manufacturer Part#: |
BCR158WE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW SOT323-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR158WE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR158 |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BCR158WE6327HTSA1 is a type of single, pre-biased transistors utilizing bipolar junction technology. This type of transistor is used in applications where both low power consumption and high voltage and current capability are required. The working principle of BCR158WE6327HTSA1 transistors is based on the principle of a diode connected in series with the base-emitter junction of a BJT.
The base-collector junction of the BCR158WE6327HTSA1 is reverse biased to prevent saturation. The base-emitter junction is forward biased to produce gain. The voltage at the base is determined by resistor divider networks, thereby biasing the transistor. This improves the stability of the transistor and reduces start-up time. The collector-emitter voltage is determined by the current source, and thus the current source voltage determines the gain of the transistor.
BCR158WE6327HTSA1 transistors are used in a variety of applications including radio frequency amplifiers, logic gates, voltage regulators, and low voltage operation amplifiers. The low power consumption makes them ideal for battery operation in portable devices. They can also be used in high-end applications such as automotive and industrial applications. The pre-biased transistors can also be used in voltage followers and as a buffer in signal conditioning circuits.
BCR158WE6327HTSA1 transistors are also used in power management applications such as switching stages, power supplies and motor control circuits. The high voltage and current capability makes it ideal for these applications. The pre-biased circuit reduces the required components in these applications. The high gain of the transistors also make them suitable for use in audio amplification and video processing.
The efficiency of the BCR158WE6327HTSA1 transistors makes it desirable for applications that require low power consumption. The small size and lower package costs also makes them ideal for use in small and medium sized products. The pre-biased design ensures that the current is limited, thereby reducing power losses and extending battery life.
The BCR158WE6327HTSA1 transistors offer a unique combination of low power consumption, high voltage and current capability, and improved stability in the media circuit. The pre-biased design reduces the number of components in the application and provides high gain. These transistors are useful in a wide range of applications where low power consumption and high performance are needed.
The specific data is subject to PDF, and the above content is for reference
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