BCR162E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BCR162E6327HTSA1TR-ND

Manufacturer Part#:

BCR162E6327HTSA1

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: BCR162E6327HTSA1 datasheetBCR162E6327HTSA1 Datasheet/PDF
Quantity: 1000
36000 +: $ 0.01631
Stock 1000Can Ship Immediately
$ 0.02
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Base Part Number: BCR162
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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BCR162E6327HTSA1 transistors are a type of single bipolar junction transistor, typically referred to as BJT. This particular device is pre-biased for specific applications, making it highly specialized component for certain tasks. In this article, we will examine the application field and working principle of the BCR162E6327HTSA1.

Application field

The BCR162E6327HTSA1 is mainly used in various types of transmitter and radio circuitry. This device provides a low-noise, high-gain solution for many applications that require amplification of a signal. It is also well-suited for use in amplifier stages, such as low-noise amplifiers and drivers. Additionally, the BCR162E6327HTSA1 can also be used in other applications where strong, reliable amplification is required, such as audio amplifiers, low-power motor drive amplifiers, and optical couplers.

Working Principle

The BCR162E6327HTSA1 is a NPN pre-biased bipolar junction transistor, meaning it has three distinct terminals: the collector, base, and emitter. A small amount of current is applied to the base of the transistor and this current is amplified at the collector - the output of the transistor. This emitter terminal is connected directly to the power source. Both the collector and emitter of the transistor are connected to the substrate, which helps to stabilize the transistor’s operation.

The amplified signal from the collector is then fed to the next amplifier stage or other device to be used in order to fulfill a specific task. This type of transistor offers an excellent combination of gain, low noise, and high linearity, making it well-suited for applications such as amplifiers, frequency multipliers, oscillators, and so on. Additionally, the pre-biased configuration of the BCR162E6327HTSA1 helps to simplify the application design and reduce overall power consumption.

Conclusion

The BCR162E6327HTSA1 is a NPN pre-biased bipolar junction transistor that is ideal for a wide variety of applications, including transmitter and radio circuitry, amplifier stages, low-power motor drives, and optical couplers. This device offers excellent gain, low noise, and high linearity, as well as a pre-biased design that reduces overall power consumption. By understanding its application field and working principle, designers can better utilize the BCR162E6327HTSA1 in their designs.

The specific data is subject to PDF, and the above content is for reference

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