BCR169E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BCR169E6327HTSA1TR-ND

Manufacturer Part#:

BCR169E6327HTSA1

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: BCR169E6327HTSA1 datasheetBCR169E6327HTSA1 Datasheet/PDF
Quantity: 1000
36000 +: $ 0.01631
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCR169
Description

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The BCR169E6327HTSA1 transistor is classified as a single, pre-biased bipolar junction transistor (BJT). It is a three-terminal device with a base, collector, and emitter. This particular device has a maximum current rating of 80mA and is designed for use in audio and other general-purpose amplifier applications.A transistor is a switch or amplifier that allows a small current or voltage at its input to control a much larger current or voltage at its output. The BCR169E6327HTSA1 is a pre-biased transistor, meaning it is biased so that the base-emitter voltage— designated as VBE—is already present when power is applied to the unit. This makes it easier to use the device in certain applications, such as audio amplifiers, as the user does not have to worry about having to bias the transistor. BCR169E6327HTSA1 is a NPN type transistor. In NPN transistors, a voltage on the base will cause a current to flow between the collector and emitter electrodes, creating a gain in the device, hence allowing it to amplify current. A voltage applied between the base and collector electrodes is usually required for NPN transistors. The biasing of the BCR169E6327HTSA1 has been taken care of, allowing the device to be used in applications without the user having to manually provide the bias voltage.The BCR169E6327HTSA1 transistor has an average current gain hFE of fifty when used as an amplifier, making it ideal for small amplitude signals. The device also has a maximum de-rating of 15% when operated at currents greater than 50mA. This ensures the transistor can be used safely in applications where the desired gain may be relatively high.The operating temperature of the BCR169E6327HTSA1 device is specified as -55°C to +150°C. It has a power dissipation of 0.2W and can therefore be safely used in most general-purpose applications.The BCR169E6327HTSA1 is an ideal device for small signal amplifier applications such as portable audio systems or low-power car audio amplifiers. The pre-biasing of the device removes the necessity of having to provide the bias voltage, making it easier to use in these small amplitude applications. The device also has a wide operating temperature range and a relatively low power dissipation. This allows it to be used in a variety of applications without compromising on reliability or performance.

The specific data is subject to PDF, and the above content is for reference

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