Allicdata Part #: | BCR183E6433HTMA1TR-ND |
Manufacturer Part#: |
BCR183E6433HTMA1 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR183E6433HTMA1 Datasheet/PDF |
Quantity: | 1000 |
40000 +: | $ 0.01631 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | BCR183 |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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.BCR183E6433HTMA1 Application Field and Working Principle
BCR183E6433HTMA1 is a pre-biased single bipolar transistor (BJT). It is used in a variety of fields such as amplifiers, switch circuits, signals, and regulators. The device is particularly useful in current and voltage conversion because its low bias capabilities provide a low operating power consumption.
Industries of Use
BCR183E6433HTMA1 is used in the fields of information technology and communications, automotive, automotive electronics and industrial control. It is also used in various types of computing and telecommunication applications, such as data transmission and storage, in which fast and reliable connections between two devices are required. Furthermore, the device can be used in audio equipment, including preamps, MIDI, and amplifier production.
Operating Principle
The BCR183E6433HTMA1 transistor is driven by bias voltage, which is applied externally to one of the three terminals. The type of bias is usually called the "common-emitter" because the input and output signals are both shared between the emitter-base junction. The transistor works by allowing the current to flow between emitter and collector when the base-emitter voltage is greater than the base-collector reverse bias voltage. This is known as "active region" operation, where the transistor is able to control the current flow between the collector and emitter by controlling the base current.
The maximum collector-emitter voltage is typically between 250-500V and the peak collector-emitter power dissipation can reach 10W. The common-emitter configuration is ideally suited for precise control of a current by manipulating the base voltage. This feature makes the BCR183E6433HTMA1 appropriate for use in amplifiers, oscillators, and as switches.
Conclusion
The BCR183E6433HTMA1 is a pre-biased single bipolar transistor that finds wide application in a variety of fields such as amplifiers, switch circuits, signals, and regulators. Its low bias capabilities provide a low operating power consumption, making it suitable for use in information technology and communications, automotive, automotive electronics and industrial control, as well as computing and telecommunication applications. Furthermore, the device can be used in audio equipment, including preamps, MIDI, and amplifier production. The common-emitter configuration is ideally suited for precise control of a current by manipulating the base voltage.
The specific data is subject to PDF, and the above content is for reference
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