Allicdata Part #: | BCR183WE6327HTSA1TR-NDTR-ND |
Manufacturer Part#: |
BCR183WE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW SOT323-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR183WE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | BCR183 |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Transistors are a type of semiconductor device used to amplify and switch electrical signals and power. Bipolar junction transistors (BJTs) are one type of transistor, which contain two layers of doped semiconductor material. Single, pre-biased transistors are the simplest type of BJT, in which the two layers are already connected with a base current before the transistor is turned on. The BCR183WE6327HTSA1 is a single, pre-biased bipolar junction transistor, and can be used in many different applications.
The main function of a BJT is to amplify a signal; this is done when an input signal is applied to the base (B) of the transistor, and a larger output signal is produced from the collector (C) and emitter (E) terminals. By adjusting the base current, the gain (or ‘amplification factor’) of the transistor can be changed, allowing a wide range of amplification to be achieved. The BCR183WE6327HTSA1 has a gain of up to 500 and can provide a maximum power output of 250mW.
The BCR183WE6327HTSA1 is suitable for many different applications, and can be used in a variety of circuits. Its pre-biased nature makes it ideal for use as an amplifier, allowing signals to be amplified with a minimal amount of current. The BCR183WE6327HTSA1 can also be used as a switch, allowing an input signal to be converted into a larger, amplified output signal. This type of transistor is often used in switching power supplies, modulating signals, and pulse-width modulation circuits.
The working principle of the BCR183WE6327HTSA1 is based on the fact that it is a bipolar junction transistor, meaning that the two semiconductor layers (the base and collector) are already biased with a base current before the transistor is turned on. When an input signal is applied, this base current will allow a much larger current to flow between the collector and the emitter, thus amplifying the signal. The amplification factor of the transistor can be adjusted by changing the base current.
In summary, the BCR183WE6327HTSA1 is a type of single, pre-biased bipolar junction transistor that can be used in a wide range of applications. It has a gain of up to 500 and can provide a maximum power output of 250mW. It works on the principle of amplifying an input signal by allowing a larger current to flow between the collector and the emitter when the base current is adjusted. The BCR183WE6327HTSA1 can be used in amplifiers, switches, and other switching power supplies, modulating signals, and pulse-width modulation circuits.
The specific data is subject to PDF, and the above content is for reference
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