| Allicdata Part #: | BCR191WH6327XTSA1TR-ND |
| Manufacturer Part#: |
BCR191WH6327XTSA1 |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | TRANS PREBIAS PNP 250MW SOT323-3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | BCR191WH6327XTSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 36000 +: | $ 0.01693 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 5mA, 5V |
| Base Part Number: | BCR191 |
| Supplier Device Package: | PG-SOT323-3 |
| Package / Case: | SC-70, SOT-323 |
| Mounting Type: | Surface Mount |
| Power - Max: | 250mW |
| Frequency - Transition: | 200MHz |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 22 kOhms |
| Resistor - Base (R1): | 22 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | PNP - Pre-Biased |
| Part Status: | Last Time Buy |
| Packaging: | Tape & Reel (TR) |
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Introduction
The BCR191WH6327XTSA1 single, pre-biased bipolar junction transistor (BJT), is a popular transistor of the BCR1xxWH6327 series. It has been designed to provide ultra-low on-state resistance at currents of over 200 A. It is suitable for a wide range of applications, including switching power supplies, motor drives, automotive applications and more.
Package Details
This product comes in a SOT-223 (Small Outline Transistor) package. This package is designed for surface mount technology and is suitable for through-hole mounting. It has a lead spacing of 1.1mm and can be used for high-power applications. The package is also RoHS compliant.
Configuration and Maximum Ratings
The BCR191WH6327XTSA1 is an N-type BJT. It is configured as a single, pre-biased transistor and has a maximum collector current rating of 200 A. It also has a maximum collector-emitter voltage of 30 V, and a maximum emitter-collector voltage of 5V. This product also has a collector-emitter saturation voltage of typically 0.2 V.
Applications
The BCR191WH6327XTSA1 is suitable for a wide range of applications, including driving power supplies, motor drives, automotive applications, diode bridge applications, and more. It can be used to drive high-power applications, such as RGB LED lighting and motor drives. It is also suitable for switching power supplies and for providing fast response time in automotive applications.
Working Principle and Characteristics
The BCR191WH6327XTSA1 works on the principle of bipolar junction transistor. It has two PN junctions - one N-base and one P-base. The current flows from the collector to the emitter when the base of the transistor is biased. This feature allows for characteristics, such as high-power response, high switching speeds and low on-state resistance.
The BCR191WH6327XTSA1 has a fast response time of typically 1.5 ns and can switch up to 500 MHz at 25 C. This product also has an ultra-low on-state resistance of as low as 0.000003 ohms. It is also rated to dissipate up to 2 W of off-state power.
Conclusion
The BCR191WH6327XTSA1 is a single, pre-biased, N-type BJT. This product is suitable for high-power applications, such as RGB LED lighting, motor drives, switching power supplies, and automotive applications. It has a fast response time and an ultra-low on-state resistance, which makes it suitable for these applications.
The specific data is subject to PDF, and the above content is for reference
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BCR191WH6327XTSA1 Datasheet/PDF