Allicdata Part #: | BCR192WE6327HTSA1TR-ND |
Manufacturer Part#: |
BCR192WE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW SOT323-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR192WE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR192 |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BCR192WE6327HTSA1 is a type of single, pre-biased transistors (BJT). It is part of a larger series developed by NXP, a renowned semiconductor company. As such, it is a part of single, pre-biased, bipolar transistors and can be used for a variety of applications. This article will discuss the BCR192WE6327HTSA1\'s application fields and working principle.
Application Fields
The BCR192WE6327HTSA1 has many applications, especially in the field of power management, sensors and amplifiers. Firstly, the part is designed to act as control and switching circuit. It can be used to regulate or switch the flow of current at different levels and is especially useful in power management systems. Secondly, the part can be used in inductive sensors to detect the presence of magnetic fields. Thirdly, the part can be used in amplifier circuitry. Its low noise and high input impedance make it ideal for amplifying low frequencies and amplifying old-fashioned vacuum tubes.
Working Principle
The BCR192WE6327HTSA1 works using the principles of a junction field-effect transistor (JFET). This type of transistor is composed of three layers: the source, the gate and the drain. When a voltage is applied to the gate, it controls the current flowing between the source and the drain. This means that when an appropriate voltage is applied to the gate, the current is increased; when a negative voltage is applied to the gate, the current is decreased.
The BCR192WE6327HTSA1 also comes with a self-adjusting gate that can automatically adjust the gain. This feature makes the transistor extremely resilient in different applications as it can easily adjust its gain to the incoming signals. This makes the part particularly useful in power management, sensors and amplifiers.
Overall, the BCR192WE6327HTSA1 is a versatile single, pre-biased bipolar transistor that is suitable for a variety of applications. It is especially suited for power management, sensing and amplifying systems due to its reliable self-adjusting gate and robust structure.
The specific data is subject to PDF, and the above content is for reference
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