BCR198E6433HTMA1 Allicdata Electronics
Allicdata Part #:

BCR198E6433HTMA1TR-ND

Manufacturer Part#:

BCR198E6433HTMA1

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: BCR198E6433HTMA1 datasheetBCR198E6433HTMA1 Datasheet/PDF
Quantity: 1000
40000 +: $ 0.01631
Stock 1000Can Ship Immediately
$ 0.02
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Base Part Number: BCR198
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 190MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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BCR198E6433HTMA1 is a type of bipolar transistor which falls under the category of pre-biased single transistors. It is a component which is used in several different applications. The transistor is designed for use in low-noise and general-purpose amplification circuits. It can also serve as a small signal or an amplifier switch or active pull-up device in digital switching circuits. Its wide usage can be attributed to its compatibility and performance.

The maximum collector current of BCR198E6433HTMA1 is 0.2A and the maximum collector-emitter voltage is 40V. It has a maximum operating temperature of 150°C and a power dissipation of 250mW. It also has a high-quality base-emitter saturation region which makes it ideal for use in low-noise and general-purpose amplification circuits. Other components, such as the integrated Circuits, may require the use of a single, pre-biased transistor to provide support.

Working Principle:

Due to the pre-biasing feature of BCR198E6433HTMA1, the component has a different working principle than other transistors. When a small negative voltage is applied to the base, the collector current increases due to the enhanced base-emitter current gain. The voltage applied to the base provides the correct bias for the conductivity between the collector and emitter.

The base-emitter saturation region also has an effect on the transistor’s performance. When a small voltage is applied to the base, the base-emitter voltage becomes more negative, resulting in an increased collector-emitter saturation current. This current flows until the collector-to-emitter voltage attains a steady state. The transistor can then be used to transfer a signal or the energy created by the signal.

The BCR198E6433HTMA1 is well-suited for use in low-noise and general-purpose amplification circuits due to its pre-biasing feature. The voltage applied to the base provides the necessary bias to ensure proper conduction between the collector and emitter. The base-emitter saturation region is also beneficial as it increases the collector-emitter saturation current when a small voltage is applied to the base. The transistor can then be used for the amplification of small signals or to serve as an active pull-up device in digital switching circuits. It can also be used in shunt regulator applications.

The specific data is subject to PDF, and the above content is for reference

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