Allicdata Part #: | BCR198E6433HTMA1TR-ND |
Manufacturer Part#: |
BCR198E6433HTMA1 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR198E6433HTMA1 Datasheet/PDF |
Quantity: | 1000 |
40000 +: | $ 0.01631 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR198 |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 190MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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BCR198E6433HTMA1 is a type of bipolar transistor which falls under the category of pre-biased single transistors. It is a component which is used in several different applications. The transistor is designed for use in low-noise and general-purpose amplification circuits. It can also serve as a small signal or an amplifier switch or active pull-up device in digital switching circuits. Its wide usage can be attributed to its compatibility and performance.
The maximum collector current of BCR198E6433HTMA1 is 0.2A and the maximum collector-emitter voltage is 40V. It has a maximum operating temperature of 150°C and a power dissipation of 250mW. It also has a high-quality base-emitter saturation region which makes it ideal for use in low-noise and general-purpose amplification circuits. Other components, such as the integrated Circuits, may require the use of a single, pre-biased transistor to provide support.
Working Principle:
Due to the pre-biasing feature of BCR198E6433HTMA1, the component has a different working principle than other transistors. When a small negative voltage is applied to the base, the collector current increases due to the enhanced base-emitter current gain. The voltage applied to the base provides the correct bias for the conductivity between the collector and emitter.
The base-emitter saturation region also has an effect on the transistor’s performance. When a small voltage is applied to the base, the base-emitter voltage becomes more negative, resulting in an increased collector-emitter saturation current. This current flows until the collector-to-emitter voltage attains a steady state. The transistor can then be used to transfer a signal or the energy created by the signal.
The BCR198E6433HTMA1 is well-suited for use in low-noise and general-purpose amplification circuits due to its pre-biasing feature. The voltage applied to the base provides the necessary bias to ensure proper conduction between the collector and emitter. The base-emitter saturation region is also beneficial as it increases the collector-emitter saturation current when a small voltage is applied to the base. The transistor can then be used for the amplification of small signals or to serve as an active pull-up device in digital switching circuits. It can also be used in shunt regulator applications.
The specific data is subject to PDF, and the above content is for reference
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