Allicdata Part #: | BCR555E6327HTSA1TR-ND |
Manufacturer Part#: |
BCR555E6327HTSA1 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 0.33W SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR555E6327HTSA1 Datasheet/PDF |
Quantity: | 12000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04032 |
6000 +: | $ 0.03506 |
15000 +: | $ 0.02980 |
30000 +: | $ 0.02805 |
75000 +: | $ 0.02630 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | BCR555 |
Supplier Device Package: | PG-SOT23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 330mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Last Time Buy |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BCR555E6327HTSA1 is a pre-biased single NPN transistor device that can be used in numerous applications. This device can provide an amplification for a variety of control and switching signals. It is commonly used for the amplification of low-voltage signals and is one of the most popular transistors for a variety of projects. Its design allows for easy integration into a system, which makes it a reliable and efficient device.
The BCR555E6327HTSA1 device operates by using two key electrical principles – ohmic (resistive) effects and majority carrier (electron) diffusion. Ohmic effects are the main cause of the device’s current flow, which is necessary for the optimal performance of the transistor. The majority carrier (electron) diffusion is responsible for the power amplification. It is this combination of ohmic and diffusion effects that enable the transistor to achieve both high speed and efficiency.
BCR555E6327HTSA1 transistors are mainly used in the sensors industry, LCD light control, smart meters, temperature control systems, power switches, and other low-power, high-performance applications. The device can handle input voltages up to 20V and maximum collector currents of up to 100mA. It also has a very low input capacitance and an extremely fast switching time, which makes it ideal for high-speed applications.
In terms of construction and layout, the BCR555E6327HTSA1 features a comformal-coated surface for improved robustness, large-area contact surfaces for improved heat dissipation, and dielectric glass for enhanced moisture resistance. The device is also RoHS compliant and UL-approved for added peace of mind.
The BCR555E6327HTSA1 is an essential tool for many applications. Its combination of low voltage and high current capabilities, robust design and easy integration makes it a reliable and efficient device for a variety of applications. Furthermore, it is an affordable device which makes it an attractive purchase for many projects.
The specific data is subject to PDF, and the above content is for reference
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