BCR562E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BCR562E6327HTSA1TR-ND

Manufacturer Part#:

BCR562E6327HTSA1

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP 0.33W SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: BCR562E6327HTSA1 datasheetBCR562E6327HTSA1 Datasheet/PDF
Quantity: 12000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04032
6000 +: $ 0.03506
15000 +: $ 0.02980
30000 +: $ 0.02805
75000 +: $ 0.02630
Stock 12000Can Ship Immediately
$ 0.04
Specifications
Resistor - Emitter Base (R2): 4.7 kOhms
Base Part Number: BCR562
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 330mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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BCR562E6327HTSA1 is a kind of transistor, which belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. It is a transistor used for a wide range of applications. This article will discuss the application fields and working principle of BCR562E6327HTSA1.

Application Fields of BCR562E6327HTSA1

BCR562E6327HTSA1 is primarily used as a switch or amplifier. It is commonly used in analog summing circuits, operational amplifiers, and differential amplifiers. It also has high input impedance and high gain, making it suitable for a wide range of applications. In addition, it is often used in motor control circuits, power supply circuits, and audio amplifiers.

BCR562E6327HTSA1 is also used in radio frequency (RF) applications. It is commonly used in RF switches, RF amplifiers, and RF modulators. It is also used for modulating and demodulating signals, and for controlling radio-frequency power. In addition, it is used in digital circuits, logic circuits, and data transfer circuits.

Working Principle of BCR562E6327HTSA1

The BCR562E6327HTSA1 is a type of bipolar junction transistor (BJT). A BJT consists of three regions, namely the base, the collector, and the emitter. In a BJT, current is controlled by the base region. The base region controls the amount of current that can flow between the collector and the emitter.

When a voltage is applied to the base region, the electrons can move from the base region to the collector region. This movement of electrons creates a current between the collector and the emitter. The amount of current that can flow depends on the voltage applied to the base region. The voltage can be adjusted to control the amount of current flowing between the collector and the emitter.

The BCR562E6327HTSA1 is a pre-biased transistor. This means that it is designed to have a certain voltage applied to the base region. This voltage ensures that a certain amount of current is flowing between the collector and the emitter. This makes it ideal for applications where a precise amount of current is needed.

Conclusion

BCR562E6327HTSA1 is a type of transistor belonging to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. It can be used for a wide range of applications, including analog summing circuits, operational amplifiers, RF switches, RF amplifiers, and RF modulators. Its working principle is based on the movement of electrons between the base, collector, and emitter regions, which is controlled by the voltage applied to the base. The BCR562E6327HTSA1 is pre-biased, ensuring that a certain amount of current is always flowing between the collector and the emitter.

The specific data is subject to PDF, and the above content is for reference

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