BR24G01FVJ-3GTE2

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (128 x 8)
Clock Frequency:	400kHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	I²C
Voltage - Supply:	1.6 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package:	8-TSSOP-BJ
Base Part Number:	BR24G01

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BR24G01FVJ-3GTE2, also known as FET Memory, is a type of non-volatile memory based on floating gate technologies. It provides lower power consumption, higher speeds, and higher capacities than alternative memory types. FET memory is a technology that uses two transistors to store data in a single memory cell, providing greater density than a standard transistor-only memory cell.The main application field for FET Memory is embedded systems, as these systems typically require large amounts of memory and have limited space available. The enhanced speed and low power consumption of FET Memory make it ideal for applications such as automotive, medical, and home appliance systems.Working PrincipleFET Memory\'s working principle is based on a tunneling effect of electrons between floating gates. The FET Memory cell consists of three transistors – two field effect transistors (FETs) and one floating gate FET (FGFET). The FGFET is the key component of FET Memory, as the electrons in the device are tunnelled between its two floating gates. This tunneling effect has two results: First, it creates a permanent charge in the memory cell, and second, it stores data. When electrons are tunnelled from one floating gate to the other, it causes the voltage on each of the two FETs to change. This voltage change is used to indicate the presence or absence of data.When power is removed from the FET Memory cell, it continues to retain the stored data until it is reset. This makes FET Memory non-volatile, meaning that it can be used for data storage even when power is removed. This non-volatility is one of the key advantages of FET Memory.AdvantagesFET Memory has several advantages over other types of non-volatile memory. These include:High density – FET Memory can store more data per unit area than other types of non-volatile memory, making it ideal for embedded systems.High speed – FET Memory inherently offers higher speeds than DRAM or flash memory.Low power consumption – FET Memory does not require much power to operate and only dissipates a fraction of the power required for flash memory.Non-volatility – FET Memory retains data without the need for power, making it ideal for battery operated devices.Reliability – FET Memory is more reliable than other types of non-volatile memory, as it is less prone to corruption due to power failures or sudden temperature changes.DisadvantagesDespite its advantages, there are some drawbacks to using FET Memory. These include:Cost – FET Memory is more expensive than other types of non-volatile memory, such as DRAM and flash memory.Limited capacity – FET Memory has limited capacity, as compared to other types of non-volatile memory.Temperature sensitivity – FET Memory is more sensitive to temperature changes than other types of non-volatile memory.ConclusionFET Memory is a type of non-volatile memory based on the tunneling effect of electrons between floating gates. It is mainly used in embedded systems due to its high speed, low power consumption, and dense storage capacity. Despite its advantages, FET Memory also has some drawbacks, including cost, limited capacity, and temperature sensitivity.

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