BR24G02FVJ-3AGTE2 Allicdata Electronics
Allicdata Part #:

BR24G02FVJ-3AG2TR-ND

Manufacturer Part#:

BR24G02FVJ-3AGTE2

Price: $ 0.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 2K I2C 1MHZ 8TSSOP
More Detail: EEPROM Memory IC 2Kb (256 x 8) I²C 1MHz 8-TSSOP-B...
DataSheet: BR24G02FVJ-3AGTE2 datasheetBR24G02FVJ-3AGTE2 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.10052
5000 +: $ 0.09234
12500 +: $ 0.09074
25000 +: $ 0.08859
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-TSSOP-BJ
Base Part Number: BR24G02
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential component in modern day computing; it provides storage for data and instructions by the CPU to execute. BR24G02FVJ-3AGTE2 is one example of memory technology available today, which has specialized application fields and specific working principles.

BR24G02FVJ-3AGTE2 is a double data rate four (DDR4) synchronous dynamic random access memory chip designed by Renesas Electronics. It features an 18-bit address bus, a 512Mbit memory size, and a maximum data transfer rate of 1600Mbps. Apart from that, it has a power consumption of 1.8V and is constructed with an 8-layer organic package.

Its primary application fields are embedded systems, automotive systems, and avionics. In embedded systems, BR24G02FVJ-3AGTE2 can be used to replace DRAM technologies, which have higher power consumption. Furthermore, it is suitable to be used in automotive systems as it offers improved immunity to environmental and mechanical stress. Lastly, its application can be seen in avionics systems and airframes, where it is used to store flight parameters and other vital data.

The working principle of BR24G02FVJ-3AGTE2 mainly revolves around its internal architecture. Unlike conventional DRAMs, the BR24G02FVJ-3AGTE2 adopts an open-page memory architecture, which consists of an array of memory cells arranged in an orderly way. When a certain address is provided, these cells are activated and the data stored in them is read or written.

Furthermore, the BR24G02FVJ-3AGTE2 facilitates data manipulation using a four-bit data bus. The four-bit data bus is coupled with a 256-bit-wide internal data bus that allow it to transfer up to eight bits of data in a cycle. Additionally, it supports up to four write operations per cycle and eight read operations per cycle, which enhances the system’s performance.

To extend its read/write operations, the chip utilizes an address auto-increment feature. This feature allows the controller to automatically increment the current address counter, making it faster and more efficient to read/write a block of memory. It also includes a write capability with error correction operations to ensure that data is accurate and consistent.

Furthermore, it also employs a power saving mechanism to prevent excessive power consumption. This is done by automatically detecting inactivity and putting the chip into a low power state, thus reducing power consumption and extending battery life.

In short, BR24G02FVJ-3AGTE2 is a versatile memory chip that can be used in embedded systems, automotive systems, and avionics. It is suitable for a wide range of applications thanks to its open-page architecture, four-bit data bus, and auto-increment feature. Its enhanced read/write operation and power saving mechanism can help improve system performance and lower overall power consumption.

The specific data is subject to PDF, and the above content is for reference

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