BR24G256FVT-3AGE2 Allicdata Electronics

BR24G256FVT-3AGE2 Integrated Circuits (ICs)

Allicdata Part #:

BR24G256FVT-3A2TR-ND

Manufacturer Part#:

BR24G256FVT-3AGE2

Price: $ 0.29
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 256K I2C 1MHZ 8TSSOP
More Detail: EEPROM Memory IC 256Kb (32K x 8) I²C 1MHz 8-TSSOP...
DataSheet: BR24G256FVT-3AGE2 datasheetBR24G256FVT-3AGE2 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.25671
6000 +: $ 0.24326
15000 +: $ 0.23905
Stock 3000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B
Base Part Number: BR24G256
Description

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BR24G256FVT-3AGE2 is a type of memory device. It has a wide range of applications and works on the principle of nonvolatile memory. The BR24G256FVT-3AGE2 uses flash memory cells to store data, which ensures permanent storage of data even after power is removed.

The BR24G256FVT-3AGE2 is especially well-suited for applications that require memory density such as automotive audio systems, hand-held equipment and embedded systems. It provides a wide range of capacities and packages, up to 8 Gigabytes. The product also contains additional features such as Wear Leveling and ECC (Error Correction Code). These features greatly improve the reliability and data accuracy.

BR24G256FVT-3AGE2 is also designed for operation in a wide range of temperatures from -40° C to +85°C, making it suitable for a number of applications. Its co-existence with other types of memories, such as Serial NOR and SRAM, is another great advantage. The device is also resistant to vibrations and shock, making it ideal for applications in transportation and aerospace.

The working principle of BR24G256FVT-3AGE2 is based on nonvolatile memories, which means data is stored in memory cells even when power is removed. The cells are arranged in a grid pattern and each cell can store a single bit of data. The device requires no charging when power is applied to it, making it ideal for applications that require low power consumption. When data is required to be written to or read from the device, it is first written to a temporary buffer and then the device is programmed to write it to the memory cells.

The BR24G256FVT-3AGE2 supports fast data transfer rates and can read data at speeds up to 20 Mbps. Its programming speeds are up to 16 Mbps and its erase speed is up to 20ms. The device also supports block protection, which prevents accidental erasure of important data stored in the device. Additionally, its fast programming time ensures efficient and reliable operation in most industrial applications.

BR24G256FVT-3AGE2 memory device is ideal for a wide range of applications, such as automotive entertainment systems, embedded systems, hand-held devices and storage solutions. Thanks to its advanced features such as fast programming, block protection, wear leveling and ECC, the device can perform reliably in harsh environments and provide reliable and accurate data storage. Nowadays, more and more companies are using the device in their products, thanks to its stability and performance.

The specific data is subject to PDF, and the above content is for reference

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