BR24L64F-WE2 Allicdata Electronics

BR24L64F-WE2 Integrated Circuits (ICs)

Allicdata Part #:

BR24L64F-WE2TR-ND

Manufacturer Part#:

BR24L64F-WE2

Price: $ 0.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 64K I2C 400KHZ 8SOP
More Detail: EEPROM Memory IC 64Kb (8K x 8) I²C 400kHz 8-SOP
DataSheet: BR24L64F-WE2 datasheetBR24L64F-WE2 Datasheet/PDF
Quantity: 1000
1 +: $ 0.46000
10 +: $ 0.44620
100 +: $ 0.43700
1000 +: $ 0.42780
10000 +: $ 0.41400
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Base Part Number: BR24L64
Description

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BR24L64F-WE2 is a type of memory that offers both high-density and high-performance. It is designed for applications where high-speed access, reliability, and capacity are essential. This memory is used in a wide range of applications, from embedded memory for automotive systems, to desktop computers, to servers.

BR24L64F-WE2 is a multi-byte NOR Flash memory device. NOR Flash memory is non-volatile, meaning it requires no power to retain data and can store information even when power is off. It is capable of executing both code and data, and has lower power consumption than other types of memory.

The BR24L64F-WE2 is an 8 megabit (1 megabyte) Flash memory that operates at a maximum clock frequency of 66 MHz. It provides one-time programmable data access and is the best choice for applications that require large memory capacities and fast access. This memory also features a built-in low-voltage reset circuit and a power down circuit to help ensure data reliability.

The BR24L64F-WE2 is commonly used in applications such as: embedded memory for automotive systems, computers, and servers; automotive audio/visual systems; GPS systems; and digital TVs. It also provides an interface for controlling NOR Flash memories for a variety of user applications.

The working principle of BR24L64F-WE2 is based on storing data in the form of electrical charges in floating gate transistors. This data is written, erased, or read using the NAND-Flash control signals. When a read command is issued, the data stored in the floating gate transistors is retrieved and placed in the holding register.

When a write command is issued, the data stored in the holding register is written in to the memory. The write signal is also used to erase cells. Erasing is done by forcing electrons from the floating gate and into the substrate, resulting in a logical one (1). After erasing the cells, new data can be written.

Unlike other types of memory such as EEPROM, BR24L64F-WE2 does not require power to retain data. This makes it ideal for applications where data must be retained even after power is removed. The data retention characteristics of BR24L64F-WE2 are excellent, typically greater than 10 years at normal room temperature.

Overall, BR24L64F-WE2 is an ideal choice for applications with large memory requirements and fast access. This memory provides reliable data retention, low power consumption, and lightning-fast access. And with its easy-to-use interface, users can write and retrieve data quickly.

The specific data is subject to PDF, and the above content is for reference

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