BR24S32F-WE2

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	32Kb (4K x 8)
Clock Frequency:	400kHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	I²C
Voltage - Supply:	1.7 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:	8-SOP
Base Part Number:	BR24S32

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BR24S32F-WE2 Application Field and Working Principle Memory components are essential parts of any embedded system. The BR24S32F-WE2 is a memory component that allows for greater memory capacity and higher read/write performance for embedded applications. It is a stand-alone, low power, high-speed, integrated flash memory IC with an abundant combination of features and flexible I/O configurations.Specifications The BR24S32F-WE2 is a 64Mb flash memory with parallel multi-bit capability, including a 2x8 boot sector with page mode and write protect. It offers a wide range of programming, erase and writing speed, enabling data to be written to the memory at a rapid pace. The memory offers a 21 address cycle with the capability for up to 8-byte sectors and 32-byte pages. The speed of the device can support up to 66MHz clock of operation.Application Fields The BR24S32F-WE2 is an ideal memory solution for embedded applications such as supervisory control, automotive, portable devices, memory cards, medical devices and industrial automation. It offers desirable characteristics such as faster program and erase times, lower current consumption, improved system performance and higher memory densities.Additionally, the device is ideal for applications that require high reliability and sustainability over time. For instance, the higher data retention and accelerated erase/write cycles help to ensure that data stored on the memory remains safe, even when subjected to adverse environmental conditions.Working Principle The BR24S32F-WE2 is based on a single-transistor, double-gate flash technology. The larger capacity single-bit allows for more data to be written to the memory in less time and with less power consumption. The device offers increased reliability through a patented wear-levelling technique, which maintains uniform data endurance across the entire device.In addition, the device uses an advanced die-stacked NAND structure which allows for faster access times, higher workloads, more endurance cycles and more accurate data retention. This design also helps to eliminate extra process steps and improve system performance.Ultimately, the BR24S32F-WE2 offers an effective solution for embedded systems, offering higher capacity, greater performance and enhanced reliability in a single-transistor double-gate memory device. The device\'s compatibility with a wide range of operating systems and user interfaces makes it perfect for a variety of applications. Its combination of features, along with its low power, high-speed and integrated features, makes it the ideal device for embedded systems.

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