| Allicdata Part #: | BR24S32FV-WE2-ND |
| Manufacturer Part#: |
BR24S32FV-WE2 |
| Price: | $ 0.32 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | IC EEPROM 32K I2C 400KHZ 8SSOPB |
| More Detail: | EEPROM Memory IC 32Kb (4K x 8) I²C 400kHz 8-SSOPB |
| DataSheet: | BR24S32FV-WE2 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.28815 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | EEPROM |
| Technology: | EEPROM |
| Memory Size: | 32Kb (4K x 8) |
| Clock Frequency: | 400kHz |
| Write Cycle Time - Word, Page: | 5ms |
| Memory Interface: | I²C |
| Voltage - Supply: | 1.7 V ~ 5.5 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-SSOPB |
| Base Part Number: | BR24S32 |
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BR24S32FV-WE2 memory is a device designed to store information. It is an essential component of any electronic system. It is used to save instructions, data and program instructions. This memory device is composed of integrated circuits (ICs) mounted on printed circuit boards (PCBs). It is widely used in various types of electronic devices, such as computers, laptops, tablets, smartphones, digital cameras, and other consumer electronics. It is also used in military and aerospace applications.
The BR24S32FV-WE2 is a 2.5-volt asynchronous SRAM device. It has a 4 MB (512 K x 8 bits) capacity and is packaged in a 32-pin TSOP-II package. It is a high-performance device and is also ideal for memory refurbishment and flash reprogramming. It has very low-power consumption and highly reliable operation.
The primary application of the BR24S32FV-WE2 is for consumer electronics, networking, and computing devices. It is also used in automotive and industrial systems. It is a high-speed, non-volatile memory device that can store up to 4M bytes of data. It is perfect for tasks such as BIOS memory, data buffer memories, stack memories, and accelerators, and can offer high speed operation with low power consumption. It is also designed to work in harsh environmental conditions.
The working principle of the BR24S32FV-WE2 memory device is that it stores user data and instructions on its memory cells. Each cell can store a logical value of either 1 or 0, known as a binary value. When a user issues a command to the device, it will read a specified set of memory cells, process the information stored in the cells, and then write back the updated results to the memory cell. The device then stores the updated contents of the data in the memory cells.
The BR24S32FV-WE2 memory device also has a system of error correction, which ensures data accuracy and integrity. This error correction system uses a technique called "error correction code" to detect and correct any data errors that may occur due to noise, power variations, or other interference. This system ensures that the data stored in the memory cells is always accurate and up-to-date.
Overall, the BR24S32FV-WE2 is a powerful and reliable memory device for a wide range of applications. Its low power consumption and error correction system make it an ideal choice for any electronic system that requires reliable storage of data. Its high speed operation also makes it suitable for a range of operations that require high transfer rates.
The specific data is subject to PDF, and the above content is for reference
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BR24S32FV-WE2 Datasheet/PDF