BR24T02FV-WGE2 Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	2Kb (256 x 8)
Clock Frequency:	400kHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	I²C
Voltage - Supply:	1.6 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-SSOPB

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Application Field and Working Principle of BR24T02FV-WGE2 MemoryBR24T02FV-WGE2, known as 2K-bit 2-Wire Serial EEPROM, is a non-volatile memory from Renesas Electronics (formerly Hitachi). This memory, a part of the HD44780 family of memory devices, enables data retention for communication interface applications such as I2C and SPI. Application Field BR24T02FV-WGE2 is a versatile memory device suitable for a broad range of applications. It’s ideal for a variety of industrial, consumer, and medical applications. This includes:

• Industrial applications
• Automation
• Factory Automation
• Control Systems
• Consumer applications
• Video & Audio Equipment
• Computer Peripheral Devices
• Instruments
• Medical applications
• Health Monitoring Systems
• Medical Imaging Equipment

Working Principle BR24T02FV-WGE2 is an electrically erasable and programmable memory, with a serial interface and fixed 1K/2K bits of organized memories. It provides users with non-volatile memory and low-pin-count communication interface with 2 data inputs, 2 data outputs, 2 chip select signals, and an output enable signal. The memory device is capable of supporting various communication protocols such as I2C, SPI and microwire. The working principle of BR24T02FV-WGE2 can be divided into three main processes: programming, reading and erasing. As soon as data is written to the memory, it is stored until the device is erased. Erasing the device would reset the memory to all “0s”.ReadingIn the reading process, each memory location can be accessed by incrementing the address pointer. With the chip “Select” low and the output enable “High”, the RTL waveform will begin the process and start the conversion cycle. During the process, the data that is written in memory is read out from the memory device. WritingIn the writing process, data is written to the memory using the same set of commands and data formats. The data written to the memory is stored until it is erased. The data must be written to the memory locations individually or in blocks. The data must be written in 16-bit blocks when writing to the memory location or in blocks. ErasingIn the erasing process, the memory is erased by specific erasing commands. The CPU will transmit command codes to the memory device, the memory device will begin the erasing process by erasing all the contents in the memory. When the erasing process is complete, the memory will be reset to all “0s”.BR24T02FV-WGE2 is a versatile and reliable memory device suitable for a wide range of applications. It uses a simple serial interface and is available in two memory capacities. With its small size and low power consumption, BR24T02FV-WGE2 is ideal for many designs.

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