BSPD200600D2P Allicdata Electronics
Allicdata Part #:

BSPD200600D2P-ND

Manufacturer Part#:

BSPD200600D2P

Price: $ 2.77
Product Category:

Circuit Protection

Manufacturer: Eaton
Short Description: SPD, 200KA, STD PKG., NEMA 4X EN
More Detail: N/A
DataSheet: BSPD200600D2P datasheetBSPD200600D2P Datasheet/PDF
Quantity: 1000
1 +: $ 2.52000
Stock 1000Can Ship Immediately
$ 2.77
Specifications
Series: BSPD
Part Status: Active
Voltage - Clamping: --
Technology: MOV
Applications: General Purpose
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The BSPD200600D2P is a versatile TVS - Mixed Technology device that is designed for a wide range of applications and uses. It utilizes a combination of uni­polar and bipolar P-MOSFET devices for an increased level of protection against overvoltage and overcurrent situations. This device is ideally suited for providing protection from transient and short-term power supply glitches or surges, as well as offering fast response times and low impedance characteristics.

The BSPD200600D2P features an enhanced protection circuit consisting of separated switching semiconductor devices. This device also provides a superior level of performance in situations where high voltages and current levels are present. As a result, the device is capable of handling power up to 20A with Voltages from 5.7V to 24V. Additionally, its high breakdown strength, fast switching times, and low on-state resistance provides reliable protection from noise and overvoltage spikes.

The BSPD200600D2P is designed to be used in a variety of applications, such as automotive, industrial, consumer electronics, computer peripheral, and data communications. Because of its low on-state resistances, it is especially useful for power line protection, where power supply line drops due to transient switching load conditions can be reduced. In addition, the device can also be used for data communications systems for the protection of opens, shorts, ground loop imperfections, and other conditions that can cause system performance degradation.

The working principle of the BSPD200600D2P is based on the integration of uni­polar and bipolar P-MOSFET technology. When voltage or current reaches the predetermined levels, the corresponding P-MOSFET device switches from its balanced state to an off state; this turns the BSPD200600D2P into a high-impedance protection state. By utilizing the leverage of the P-MOSFET transistor amplifier, a combination of diode avalanche and transistor switching can be used for reliable protection without sacrificing performance.

The BSPD200600D2P operates over a wide range of temperatures and is capable of handling up to 20A in the presence of high voltages and over-voltages up to 24V. The device’s on-state resistance is extremely low and it is very fast in operation. Additionally, the BSPD200600D2P offers a superior level of protection from noise and overvoltage spikes, making it an ideal choice for protecting valuable electronic equipment. The device is also cost-effective and easy to install, making it a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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