Allicdata Part #: | CA3127M-ND |
Manufacturer Part#: |
CA3127M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America Inc. |
Short Description: | TRANSISTOR ARRAY NPN 16-SOIC |
More Detail: | RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW Surface ... |
DataSheet: | CA3127M Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | 5 NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1.15GHz |
Noise Figure (dB Typ @ f): | 3.5dB @ 100MHz |
Gain: | 27dB ~ 30dB |
Power - Max: | 85mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 6V |
Current - Collector (Ic) (Max): | 20mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
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CA3127M is a type of bipolar transistor. It is most often used in radio-frequency (RF) applications. It is manufactured using a bipolar technology process and has a wide spectrum of applications in the medical, industrial, and consumer electronics markets. The device is able to offer enhanced performance over other types of transistors due to its ability to operate at higher frequencies, its low noise figure, and its wide bandwidth.
The CA3127M is a very small device measuring only 1.2mm x 2.6mm x 1.2mm. This makes it extremely suitable for size-sensitive applications. It also has an operating temperature range of -55°C to +150°C, making it suitable for use in extreme conditions. The device\'s integration level is very high, meaning that it has high performance in a small package. Additionally, the low supply voltage makes it very energy-efficient.
The CA3127M has a breakdown voltage of 60V and its current gain can be anywhere between 130 and 400. It also has a maximum-rated dissipation power of 600mW. In addition to these characteristics, the device has very good stability, making it ideal for long-term use. Additionally, it provides high input impedance, which allows it to operate more effectively in applications with low operating voltages.
The working principle of the CA3127M is relatively simple. It operates by taking a signal at its input and amplifying it in order to increase its power and frequency. This is done by passing the signal through two transistors, one in the NPN configuration and one in the PNP configuration. The NPN transistor amplifies the signal, while the PNP transistor amplifies the negative part of the signal. This increased power is then fed to the output where it can be used. The input and output impedances determine the amount of current and voltage, respectively, that the transistors can handle.
The CA3127M is a versatile device that finds uses in many different applications. It is most commonly used in RF circuits due to its ability to operate at higher frequencies, its low noise figure, and its wide bandwidth. It is also used in medical imaging, where it is able to provide clear images with good detail. Additionally, the device can be used in industrial and consumer electronics products, where it offers enhanced performance over other types of transistors.
In summary, the CA3127M is a type of bipolar transistor designed for radio-frequency applications. It offers high performance in a small package, has an operating temperature range of -55°C to +150°C, has a maximum-rated dissipation power of 600mW, and has high input impedance. It works by taking a signal at its input and amplifying it in order to increase its power and frequency. The device is versatile and finds applications in the medical, industrial, and consumer electronics markets.
The specific data is subject to PDF, and the above content is for reference
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