CAT25128VP2I-GT3 Integrated Circuits (ICs) |
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| Allicdata Part #: | CAT25128VP2I-GT3OSTR-ND |
| Manufacturer Part#: |
CAT25128VP2I-GT3 |
| Price: | $ 0.36 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | ON Semiconductor |
| Short Description: | IC EEPROM 128K SPI 10MHZ 8TDFN |
| More Detail: | EEPROM Memory IC 128Kb (16K x 8) SPI 10MHz 8-TDFN... |
| DataSheet: | CAT25128VP2I-GT3 Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.33508 |
| 6000 +: | $ 0.32417 |
| 15000 +: | $ 0.31347 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | EEPROM |
| Technology: | EEPROM |
| Memory Size: | 128Kb (16K x 8) |
| Clock Frequency: | 10MHz |
| Write Cycle Time - Word, Page: | 5ms |
| Memory Interface: | SPI |
| Voltage - Supply: | 1.8 V ~ 5.5 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-WFDFN Exposed Pad |
| Supplier Device Package: | 8-TDFN (2x3) |
| Base Part Number: | CAT25128 |
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CAT25128VP2I-GT3 is an electrically erasable programmable read-only memory (EEPROM) device released by ON Semiconductor. This device offers 32-bit address space and 128 bits of memory cell coupled with a static random access memory (SRAM) page buffer. It allows for nonvolatile data storage for microcontrollers and other applications. The EEPROM allows for fast write speed up to 2.5ms, and features a serial bus interface.
This device can be found in a wide range of applications, as this product offers high access speed and low power consumption. Examples of applications include medical equipment, smart home applications, building automation, industrial projects, and many more. The device can also be used in automotive electrical systems and is AEC-Q100 qualified.
Working Principle of CAT25128VP2I-GT3
The CAT25128VP2I-GT3 device utilizes a serial bus interface system (SPI) to access, store and manipulate data. The device acts as an external memory device that provides backup to microcontrollers, allowing the microcontroller to execute instructions without complete memory systems on board. Data is written to the device and stored when the voltage is applied to the chip. It uses an on-chip static RAM page buffer, and has 32 or 64-Kbits of memory cell space, depending on the configuration.
When writing data to the device, the data is transferred from the external microcontroller to the EEPROM via the serial bus interface. In the write cycle, the data is first preserved in the page buffer and verified by the programmable logic array (PLA) shackle. After verification, the data is written to the memory array by the external clock signal. When reading out data from the device, the data is first transferred from the memory array to the page buffer, and thereafter sent to the microcontroller via the serial bus interface.
To erase the entire data in the device, the code “0xFF” must be written. This can be done by the microcontroller through the serial bus interface. The cycle time to erase the data is much shorter than the write cycle time.
CAT25128VP2I-GT3 devices are available in a variety of package types, including 8-pin SOIC, 8-pin PDIP, and 8-pad WLP packages. The device provides error checking during data transfer with enhanced programming protection. The device has an extended temperature range of -40°C to 85°C and is used in automotive applications, making it reliable for years. This EEPROM device is a great choice for any customer looking for nonvolatile memory solutions.
The specific data is subject to PDF, and the above content is for reference
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CAT25128VP2I-GT3 Datasheet/PDF