CM1400DUC-24NF Allicdata Electronics
Allicdata Part #:

CM1400DUC-24NF-ND

Manufacturer Part#:

CM1400DUC-24NF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MODULE 1400A 1200V
More Detail: IGBT Module Half Bridge 1200V 1400A 8900W Module
DataSheet: CM1400DUC-24NF datasheetCM1400DUC-24NF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: IGBTMOD™
Part Status: Discontinued at Digi-Key
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 1400A
Power - Max: 8900W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 1400A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 220nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: Module
Supplier Device Package: Module
Description

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The CM1400DUC-24NF is considered one of the most advanced power switching devices currently available. It is an insulated gate bipolar transistor (IGBT) module primarily used in high-power industrial and automotive applications. This particular part is part of Mitsubishi’s CIB series, which is a range of IGBT modules suitable for PWM inverter applications. Mitsubishi has designed this IGBT to meet the increasingly stringent requirements of high-power applications.

IGBT modules are becoming increasingly popular in industrial and automotive applications due to their excellent performance characteristics. In comparison to other power switching devices, IGBTs provide excellent operational characteristics, including high switching speed, high breakdown voltage, low on-state voltage drop and a wide operating temperature range. Moreover, the IGBTs have a much longer lifetime due to their built-in protective features.

The CM1400DUC-24NF is an excellent choice for applications such as motor drive systems, inverters, UPS systems and HVDC/LVDC power supply systems. It has an operating voltage of 1400V and a collector current of 24A. Additionally, it features a low output capacitance and switching losses. In terms of protection, the CM1400DUC-24NF features both over temperature protection (OTP) and over current protection (OCP). It also has a maximum junction temperature of 175°C and can operate in temperatures ranging from -40°C to 125°C.

The working principle of the CM1400DUC-24NF is based on the principle of insulated gate bipolar transistor (IGBT). An IGBT consists of two components, an emitter and a collector, as well as a control element, known as the gate. The gate is responsible for controlling the current flow between the emitter and collector. When the gate is “on”, current flows freely through the device. As the current flow increases, the gate “opens”, allowing more current to flow. This is known as “pulsed mode” operation. In contrast, when the gate is “off”, current is prevented from flowing between the emitter and collector. This is known as “cut-off” mode operation.

In order to maximize the efficiency of the device, the gate must be operated using the appropriate signals. For example, in high-power applications, the gate must be operated using a PWM (pulse width modulation) signal. PWM signals are typically generated by a microcontroller and are used to control the amount of current flowing through the IGBT module. This ensures that the device is efficiently operated at all times.

Overall, the Mitsubishi CM1400DUC-24NF is an excellent choice for high-power applications such as motor drive systems, motor control systems and HVDC/LVDC power supply systems. Its excellent operational characteristics, such as its high switching speed, low on-state voltage drop and wide operating temperature range, make it an ideal choice for demanding applications. Moreover, its built-in protective features, such as over-temperature and over-current protection, ensure that it is safe and reliable to use in any environment.

The specific data is subject to PDF, and the above content is for reference

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