Allicdata Part #: | CM300DU-12F-ND |
Manufacturer Part#: |
CM300DU-12F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MOD DUAL 600V 300A F SER |
More Detail: | IGBT Module Trench Half Bridge 600V 300A 830W Chas... |
DataSheet: | CM300DU-12F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | IGBTMOD™ |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | Trench |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 300A |
Power - Max: | 830W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 300A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 81nF @ 10V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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CM300DU-12F is the latest in a long line of insulated gate bipolar transistors (IGBTs) from the Mitsubishi Electric Corporation. The CM300DU-12F is one of the most advanced IGBTs available, featuring a high-strength dielectric gate oxide for excellent gate turn-on, low on-state voltage, fast turn-off switching and a low-profile, low-inductance package that reduces conduction losses and increases power density.
The CM300DU-12F is mainly used in medium to high voltage applications such as motor drives and inverters. Its modular design allows for easy customization and scalability, while the high-performance IGBTs help ensure reliable and energy efficient operation. Its low on-state voltage and fast switching capabilities make it a great choice for applications where current and power requirements are high and efficiency is a priority.
The working principle of the CM300DU-12F is based on the principle of the insulated gate bipolar transistor (IGBT). The IGBT consists of a p-type and an n-type semiconductor material separated by a thin and dielectric insulating layer. A voltage is applied across the insulating layer, which creates a charge barrier between the two materials. This barrier acts like a gate, allowing current to flow between the two materials as soon as the voltage reaches a certain level.
When operated in the "on" state, a small amount of current is passed through the IG Drive circuit. This current flows through the p and n type materials, allowing the two materials to conduct. As the current passes through the IGBTs, it creates a strong electric field which causes the large current to flow between the two materials, creating a power switch. This power switch can be used to connect or disconnect power to applications such as electric motors, inverters and other high-voltage applications.
The CM300DU-12F is designed to be used in applications that require high current and power requirements. Its modular design, low on-state voltage, fast switching and low –inductance package make it an excellent choice for high-power applications such as motor drives and power inverters. With its high efficiency and reliable operation, the CM300DU-12F is a great choice for any high voltage application.
In summary, the CM300DU-12F is a high performance IGBT module from Mitsubishi Electric Corporation. It is mainly used in medium to high voltage applications such as motor drives and inverters. Its modular design, low on-state voltage and fast switching capabilities make it a great choice for power and efficiency-critical applications. The IGBT working principle helps it to achieve high efficiency and reliable operation, making it an excellent choice for any high voltage application.
The specific data is subject to PDF, and the above content is for reference
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