CMR04E750JODR

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Mica and PTFE capacitors are composed of a tantalum oxide or aluminium oxide layer that is sandwiched between two polytetrafluoroethylene (PTFE) dielectrics. This type of capacitor allows for a high dielectric constant, enabling the device to store more charge within a given area than other types of capacitors. The CMR04E750JODR is a Mica and PTFE capacitor specifically designed for the purpose of using in high-frequency applications in which low loss and high accuracy is required.

The CMR04E750JODR is a three-layer dielectric device, featuring a high tolerance to temperatures and an ohmic range of up to 1,000V. It is a nitride passivated device, based on a TO-220 footprint, with excellent heat resistance and high insulation properties. The device can operate in temperatures ranging from -55 to 125°C, and has a capacitance of 1,65µF (±10%).

The CMR04E750JODR application field is mainly focused on the telecommunications and automotive industries, where it can be used for power switching applications, digital signal processing, and noise suppression. It is also often used for power supply filtering applications in laptop and desktop computers. This type of capacitor is a great choice for high frequency applications because it maintains low impedance over a wide range of frequencies, allowing for more efficient switching between power devices.

The CMR04E750JODR working principle relies on an electrostatic charge stored between two plates, with a dielectric separating them. The dielectric material used for the CMR04E750JODR is PTFE and mica, and when a voltage is applied, an electric field is created and a charge is stored. The amount of charge stored is determined by the applied voltage, the capacitance of the device, and the dielectric constant of the materials used.

The CMR04E750JODR is a reliable and efficient choice for a wide range of applications requiring high frequency performance. Its layered dielectric design and high temperature range make it suitable for use in demanding environments, while its high capacitance and low impedance characteristics make it suitable for use in high-frequency, high-power applications.

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