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Memory

CY14B101NA-ZS25XIT is a 128 Mbit (16M x 8) Static Random Access Memory (SRAM). CY14B101NA-ZS25XIT’s access time is 25ns and it is also characterized with low power consumption. It is organized with 16,777,216 words by 8/9/10/11-bit data I/O. The fast access time and low power consumption make this SRAM well-suited for embedded memory applications, including FIFO’s, LCD display buffer, burst data buffers and medical imaging.

CY14B101NA-ZS25XIT is available in a 44-pin TSSOP (Thin Small-Scale Outline Package) package. It is fabricated with industrial grade architecture and CMOS process which offers high reliability for automotive applications as well. The device offers high speed CMOS logic compatible Input/Outputs, including low power standby and a separate CS (Chip Select) and OE (Output Enable) controls.

The functionality of the device make it suitable for Off-Chip External Burst ROM Emulation and On-Chip SRAM Substitution. The device also offers page mode support to allow word line accesses of multiple addresses while data remains unchanged, which makes it suitable to be used with microcontrollers. The features of CY14B101NA-ZS25XIT also include a signature byte for every cycle which can be read independently of data, and advanced writing techniques such as page and word write.

The CY14B101NA-ZS25XIT uses a Serial Presence Detect (SPD) to enable higher system speeds and low power consumption. This IC is controlled by the CS (Chip Select), OE (Output Enable), WR (Write Enable) and a Clock signal. The device has an asynchronous interface and can be used with both synchronous and asynchronous applications. The device provides data I/O on the D8~D0 pins, along with the CS/S Input, OE/OE, WR/WR Input and CLK/CLK Input pins, respectively. The device is powered by a single +1.8V to +3.6V and has the minimum low voltage supply of 3.15 volts.

The typical access time of 25ns of CY14B101NA-ZS25XIT makes it suitable for high speed applications. In addition, the device only consumes 1mA of current in active mode and eliminates the CCD or refresh circuitry which makes it power efficient. This also provides a wide operating temperature range of -40C to +85C which makes it suitable for industrial grade applications.

CY14B101NA-ZS25XIT is a 16M x 8 SRAM, with extended temperature and high reliability options in an ultra-small teardrop package. This low-power SRAM device is the ideal replacement for traditional asynchronous SRAMs and asynchronous DRAMs, for applications including medical, automotive and industrial.

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