DF120R12W2H3B27BOMA1

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	50A
Power - Max:	180W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 40A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	2.35nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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DF120R12W2H3B27BOMA1 Application Fields and Working Principle Exploring the application and working principle of DF120R12W2H3B27BOMA1, a type of IGBT module, can help us understand the areas of greatest use and the way in which it functions.Insulated Gate Bipolar Transistors (IGBTs) are semiconductor devices that are differentiated from standard transistors by the fact that they combine bipolar and insulated-gate field-effect technologies. IGBTs have the switching efficiency of BJTs and the low-voltage characteristics of MOSFETs, which makes them suitable for use in a wide range of applications. Amongst these, the DF120R12W2H3B27BOMA1 IGBT module is used for high power applications such as inverters, UPS systems, solar battery systems, and variable frequency drives.When it comes to operating principles, the IGBT modules such as the DF120R12W2H3B27BOMA1 use a three-layer structure, each one with its own function. The first layer consists of the device’s diffusion layer, which is engineered to maximise the speed of switching. This layer lies beneath the emitter side of the transistor, and it is equipped with a p-type NPN junction that allows current conduction by the leftmost part of the device. The second layer is composed of the gate oxide layer, which lies beneath the base contact. This layer contains insulation necessary to protect the device from external influences, as well as to prevent the leakage of current flow. The third layer is the collector contact, which is where the current passes through the collector and out of the device for power control purposes.The DF120R12W2H3B27BOMA1 IGBT module utilizes a unique technique that makes it especially suitable for high frequency applications such as those found in motor drives, welding machines, and portable electronic systems. This technique, known as the “Flyback Method,” allows the device to be switched between its ON and OFF states much faster than other types of transistors. This makes the DF120R12W2H3B27BOMA1 ideal for use in high-load and high-power circuits as it can rapidly switch between its ON and OFF states in response to voltage changes. Unlike other transistor modules, it also has a very low reverse transfer capacitance, which allows for higher frequency operation.The DF120R12W2H3B27BOMA1 IGBT module is an essential building block for constructing high-frequency IGBT-based circuits such as variable frequency drives, servo-motors, and PMSM (Permanent Magnet Synchronous Motors). These devices require much higher switching speeds than traditional IGBTs and other types of transistors and semiconductor components, so the Flyback Method employed by the DF120R12W2H3B27BOMA1 can provide superior performance in such applications.Moreover, the DF120R12W2H3B27BOMA1 offers an impressive level of power range, with an output ranging from 75A to 1500A. This makes it suitable for many high power applications, including inverters and UPS systems, solar battery systems, and motor drives. There is also superior thermal management available, with integrated heat sinks and an efficient aluminum casing material that dissipates the heat quickly and effectively. Given the impressive performance and power range of the DF120R12W2H3B27BOMA1, it is no surprise that it is increasingly being used in many high power and high frequency industrial applications. Overall, the DF120R12W2H3B27BOMA1 IGBT module provides a level of efficiency and performance that makes it the preferred choice for many industrial applications. Offering superior speed, power range, and heat dissipation capabilities, the DF120R12W2H3B27BOMA1 is increasingly becoming the go-to option for engineers and manufacturers who are looking for a reliable, high-performance IGBT module.

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