DF400R07PE4R_B6 Allicdata Electronics
Allicdata Part #:

DF400R07PE4R_B6-ND

Manufacturer Part#:

DF400R07PE4R_B6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT DF400R07PE4RB6BOSA1
More Detail: IGBT Module NPT Single Chopper 650V 450A 1100W Cha...
DataSheet: DF400R07PE4R_B6 datasheetDF400R07PE4R_B6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
IGBT Type: NPT
Configuration: Single Chopper
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 450A
Power - Max: 1100W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
Current - Collector Cutoff (Max): 20nA
Input Capacitance (Cies) @ Vce: 18.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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A DF400R07PE4R_B6 module is an insulated-gate bipolar transistor (IGBT) module. IGBT modules are useful in a variety of applications[[1]], making them a versatile device to have on hand. Additionally, these highly reliable components allow for efficient power transmission and high-speed switching.
The DF400R07PE4R_B6 module can be used in a variety of applications that require fast switching of high power currents. These applications include motor control, power converters, lighting control systems, solar and wind power systems, consumer electronics and military and aerospace applications.The DF400R07PE4R_B6 module is composed of an IGBT, a fast recovery diode, a freewheeling diode, and a base plate featuring innovative thermal design. The module also utilizes an embedded lock-in diode together with the upper IGBT chips to suppress transients caused by sudden voltage changes.The DF400R07PE4R_B6 module, composed of multiple three-terminal semiconductors, works on the principle of the insulated-gate bipolar transistor. It uses a control gate and a voltage source to control the current flow between one pair of terminals (the emitter and collector). This type of transistor contains two semiconductor layers, one of which is insulated, hence the name IGBT.The IGBT in the DF400R07PE4R_B6 module is constructed using a PWR-10° technology. The module also incorporates a very sophisticated anti-parallel diode configuration along with a current sharing feature, which enhances its current rating to 36A.The DF400R07PE4R_B6 module has an innovative thermal design to ensure a good thermal performance and a longer product lifetime. It boasts a high forward voltage drop and a low reverse recovery time, enabling better power savings. The module is air-insulated and has a maximum junction temperature of sensitive 155°C. The ambient temperature is rated from -40°C to 125°C.In general, the DF400R07PE4R_B6 module offers excellent switching performance, allowing the user to manage high power currents with higher efficiency. It is highly reliable and offers superior heat dissipation abilities. With its ever-expanding range of applications, the DF400R07PE4R_B6 module is a great choice for efficient, high-speed switching.

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